Transistors - FETs, MOSFETs - Moja

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Transistors - FETs, MOSFETs - Moja

SIHG21N65EF-GE3

Vishay Siliconix

SIHG21N65EF-GE3

Sehemu ya hisa.: 12350

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 650V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 21A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 10V,

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SI1422DH-T1-GE3

Vishay Siliconix

SI1422DH-T1-GE3

Sehemu ya hisa.: 107910

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 12V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 26 mOhm @ 5.1A, 4.5V,

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SQJ422EP-T1_GE3

Vishay Siliconix

SQJ422EP-T1_GE3

Sehemu ya hisa.: 105698

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 74A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 18A, 10V,

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Vishay Siliconix

SIHF22N60E-GE3

Sehemu ya hisa.: 32877

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 21A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 10V,

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Vishay Siliconix

SIHG24N65E-GE3

Sehemu ya hisa.: 10853

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 650V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 24A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 145 mOhm @ 12A, 10V,

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SIHP28N65EF-GE3

Vishay Siliconix

SIHP28N65EF-GE3

Sehemu ya hisa.: 10311

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 650V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 28A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 117 mOhm @ 14A, 10V,

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SI3433CDV-T1-GE3

Vishay Siliconix

SI3433CDV-T1-GE3

Sehemu ya hisa.: 120260

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 38 mOhm @ 5.2A, 4.5V,

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SISA24DN-T1-GE3

Vishay Siliconix

SISA24DN-T1-GE3

Sehemu ya hisa.: 187428

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 25V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 60A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 15A, 10V,

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SIHG28N60EF-GE3

Vishay Siliconix

SIHG28N60EF-GE3

Sehemu ya hisa.: 10031

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 28A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 123 mOhm @ 14A, 10V,

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SI4056DY-T1-GE3

Vishay Siliconix

SI4056DY-T1-GE3

Sehemu ya hisa.: 199641

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 11.1A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 23 mOhm @ 15A, 10V,

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SIA414DJ-T1-GE3

Vishay Siliconix

SIA414DJ-T1-GE3

Sehemu ya hisa.: 176137

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 8V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 12A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.2V, 4.5V, Rds On (Max) @ Id, Vgs: 11 mOhm @ 9.7A, 4.5V,

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SI7149DP-T1-GE3

Vishay Siliconix

SI7149DP-T1-GE3

Sehemu ya hisa.: 96788

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 50A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 15A, 10V,

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Vishay Siliconix

IRF830STRLPBF

Sehemu ya hisa.: 54793

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4.5A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.7A, 10V,

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SIHB21N65EF-GE3

Vishay Siliconix

SIHB21N65EF-GE3

Sehemu ya hisa.: 13053

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 650V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 21A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 10V,

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SI2307BDS-T1-E3

Vishay Siliconix

SI2307BDS-T1-E3

Sehemu ya hisa.: 153121

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.5A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 78 mOhm @ 3.2A, 10V,

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SI3458BDV-T1-E3

Vishay Siliconix

SI3458BDV-T1-E3

Sehemu ya hisa.: 199617

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4.1A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 100 mOhm @ 3.2A, 10V,

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SI3493BDV-T1-E3

Vishay Siliconix

SI3493BDV-T1-E3

Sehemu ya hisa.: 137186

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 8A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 27.5 mOhm @ 7A, 4.5V,

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SUD50P08-25L-E3

Vishay Siliconix

SUD50P08-25L-E3

Sehemu ya hisa.: 57347

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 80V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 50A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 25.2 mOhm @ 12.5A, 10V,

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SIR692DP-T1-RE3

Vishay Siliconix

SIR692DP-T1-RE3

Sehemu ya hisa.: 85603

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 250V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 24.2A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 7.5V, 10V, Rds On (Max) @ Id, Vgs: 63 mOhm @ 10A, 10V,

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SQD25N15-52_GE3

Vishay Siliconix

SQD25N15-52_GE3

Sehemu ya hisa.: 39824

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 150V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 25A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 52 mOhm @ 15A, 10V,

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Vishay Siliconix

IRLL014TRPBF

Sehemu ya hisa.: 156687

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.7A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4V, 5V, Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.6A, 5V,

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SQ2361AEES-T1_GE3

Vishay Siliconix

SQ2361AEES-T1_GE3

Sehemu ya hisa.: 158861

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.8A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 170 mOhm @ 2.4A, 10V,

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SISS26DN-T1-GE3

Vishay Siliconix

SISS26DN-T1-GE3

Sehemu ya hisa.: 32308

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 60A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 15A, 10V,

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Vishay Siliconix

SI8429DB-T1-E1

Sehemu ya hisa.: 158589

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 8V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 11.7A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.2V, 4.5V, Rds On (Max) @ Id, Vgs: 35 mOhm @ 1A, 4.5V,

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SUD45P03-09-GE3

Vishay Siliconix

SUD45P03-09-GE3

Sehemu ya hisa.: 124843

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 45A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 8.7 mOhm @ 20A, 10V,

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SIHH24N65EF-T1-GE3

Vishay Siliconix

SIHH24N65EF-T1-GE3

Sehemu ya hisa.: 16548

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 650V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 23A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 158 mOhm @ 12A, 10V,

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SUD08P06-155L-GE3

Vishay Siliconix

SUD08P06-155L-GE3

Sehemu ya hisa.: 193963

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 8.4A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 155 mOhm @ 5A, 10V,

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SQ3427AEEV-T1_GE3

Vishay Siliconix

SQ3427AEEV-T1_GE3

Sehemu ya hisa.: 184741

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5.3A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 95 mOhm @ 4.5A, 10V,

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SI1330EDL-T1-E3

Vishay Siliconix

SI1330EDL-T1-E3

Sehemu ya hisa.: 118364

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 240mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 3V, 10V, Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 250mA, 10V,

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SUM110N10-09-E3

Vishay Siliconix

SUM110N10-09-E3

Sehemu ya hisa.: 42606

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 110A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 30A, 10V,

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SI1441EDH-T1-GE3

Vishay Siliconix

SI1441EDH-T1-GE3

Sehemu ya hisa.: 126542

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 41 mOhm @ 5A, 4.5V,

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SUD50N03-09P-E3

Vishay Siliconix

SUD50N03-09P-E3

Sehemu ya hisa.: 98650

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 63A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 20A, 10V,

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Vishay Siliconix

SI8483DB-T2-E1

Sehemu ya hisa.: 167358

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 12V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 16A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.5V, 4.5V, Rds On (Max) @ Id, Vgs: 26 mOhm @ 1.5A, 4.5V,

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SI7421DN-T1-GE3

Vishay Siliconix

SI7421DN-T1-GE3

Sehemu ya hisa.: 113309

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6.4A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 25 mOhm @ 9.8A, 10V,

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SIR800DP-T1-GE3

Vishay Siliconix

SIR800DP-T1-GE3

Sehemu ya hisa.: 93648

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 50A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 2.5V, 10V, Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 15A, 10V,

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SIHW47N60EF-GE3

Vishay Siliconix

SIHW47N60EF-GE3

Sehemu ya hisa.: 10860

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 47A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 65 mOhm @ 24A, 10V,

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3600

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