Transistors - FETs, MOSFETs - safu

Nyumbani
Transistors - FETs, MOSFETs - safu

Vishay Siliconix

SI5944DU-T1-E3

Sehemu ya hisa.: 2715

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6A, Rds On (Max) @ Id, Vgs: 112 mOhm @ 3.3A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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Vishay Siliconix

SI1016X-T1-E3

Sehemu ya hisa.: 2759

Aina ya FET: N and P-Channel, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 485mA, 370mA, Rds On (Max) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

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SI5904DC-T1-GE3

Vishay Siliconix

SI5904DC-T1-GE3

Sehemu ya hisa.: 2807

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.1A, Rds On (Max) @ Id, Vgs: 75 mOhm @ 3.1A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

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SI9936BDY-T1-GE3

Vishay Siliconix

SI9936BDY-T1-GE3

Sehemu ya hisa.: 2872

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4.5A, Rds On (Max) @ Id, Vgs: 35 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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Vishay Siliconix

VQ2001P-2

Sehemu ya hisa.: 2875

Aina ya FET: 4 P-Channel, Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 600mA, Rds On (Max) @ Id, Vgs: 2 Ohm @ 1A, 12V, Vgs (th) (Max) @ Id: 4.5V @ 1mA,

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SIA911DJ-T1-GE3

Vishay Siliconix

SIA911DJ-T1-GE3

Sehemu ya hisa.: 2844

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4.5A, Rds On (Max) @ Id, Vgs: 94 mOhm @ 2.8A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

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SI4814BDY-T1-E3

Vishay Siliconix

SI4814BDY-T1-E3

Sehemu ya hisa.: 3376

Aina ya FET: 2 N-Channel (Half Bridge), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 10A, 10.5A, Rds On (Max) @ Id, Vgs: 18 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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SI4818DY-T1-GE3

Vishay Siliconix

SI4818DY-T1-GE3

Sehemu ya hisa.: 2835

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5.3A, 7A, Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.3A, 10V, Vgs (th) (Max) @ Id: 800mV @ 250µA (Min),

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Vishay Siliconix

SI7904DN-T1-E3

Sehemu ya hisa.: 2818

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5.3A, Rds On (Max) @ Id, Vgs: 30 mOhm @ 7.7A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 935µA,

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SI5920DC-T1-GE3

Vishay Siliconix

SI5920DC-T1-GE3

Sehemu ya hisa.: 2868

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 8V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4A, Rds On (Max) @ Id, Vgs: 32 mOhm @ 6.8A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

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SI5519DU-T1-GE3

Vishay Siliconix

SI5519DU-T1-GE3

Sehemu ya hisa.: 2823

Aina ya FET: N and P-Channel, Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6A, Rds On (Max) @ Id, Vgs: 36 mOhm @ 6.1A, 4.5V, Vgs (th) (Max) @ Id: 1.8V @ 250µA,

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Vishay Siliconix

SI1903DL-T1-E3

Sehemu ya hisa.: 2791

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 410mA, Rds On (Max) @ Id, Vgs: 995 mOhm @ 410mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

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Vishay Siliconix

SI1905DL-T1-E3

Sehemu ya hisa.: 2724

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 8V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 570mA, Rds On (Max) @ Id, Vgs: 600 mOhm @ 570mA, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 250µA (Min),

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Vishay Siliconix

SI6983DQ-T1-E3

Sehemu ya hisa.: 2714

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4.6A, Rds On (Max) @ Id, Vgs: 24 mOhm @ 5.4A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 400µA,

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Vishay Siliconix

VQ2001P

Sehemu ya hisa.: 2906

Aina ya FET: 4 P-Channel, Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 600mA, Rds On (Max) @ Id, Vgs: 2 Ohm @ 1A, 12V, Vgs (th) (Max) @ Id: 4.5V @ 1mA,

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SI4947ADY-T1-GE3

Vishay Siliconix

SI4947ADY-T1-GE3

Sehemu ya hisa.: 2852

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3A, Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.9A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

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Vishay Siliconix

SI1913DH-T1-E3

Sehemu ya hisa.: 2766

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 880mA, Rds On (Max) @ Id, Vgs: 490 mOhm @ 880mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 100µA,

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SI4276DY-T1-GE3

Vishay Siliconix

SI4276DY-T1-GE3

Sehemu ya hisa.: 2851

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 8A, Rds On (Max) @ Id, Vgs: 15.3 mOhm @ 9.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

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SI3905DV-T1-GE3

Vishay Siliconix

SI3905DV-T1-GE3

Sehemu ya hisa.: 2849

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 8V, Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 250µA (Min),

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SI4913DY-T1-GE3

Vishay Siliconix

SI4913DY-T1-GE3

Sehemu ya hisa.: 2852

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 7.1A, Rds On (Max) @ Id, Vgs: 15 mOhm @ 9.4A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 500µA,

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SI3909DV-T1-GE3

Vishay Siliconix

SI3909DV-T1-GE3

Sehemu ya hisa.: 2826

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.8A, 4.5V, Vgs (th) (Max) @ Id: 500mV @ 250µA (Min),

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SI4944DY-T1-GE3

Vishay Siliconix

SI4944DY-T1-GE3

Sehemu ya hisa.: 2874

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 9.3A, Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 12.2A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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SI4933DY-T1-GE3

Vishay Siliconix

SI4933DY-T1-GE3

Sehemu ya hisa.: 2815

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 12V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 7.4A, Rds On (Max) @ Id, Vgs: 14 mOhm @ 9.8A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 500µA,

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SI7909DN-T1-GE3

Vishay Siliconix

SI7909DN-T1-GE3

Sehemu ya hisa.: 2908

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 12V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5.3A, Rds On (Max) @ Id, Vgs: 37 mOhm @ 7.7A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 700µA,

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Vishay Siliconix

SI7844DP-T1-E3

Sehemu ya hisa.: 3302

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6.4A, Rds On (Max) @ Id, Vgs: 22 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

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SI4567DY-T1-GE3

Vishay Siliconix

SI4567DY-T1-GE3

Sehemu ya hisa.: 2812

Aina ya FET: N and P-Channel, Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5A, 4.4A, Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.1A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

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Vishay Siliconix

SI7214DN-T1-E3

Sehemu ya hisa.: 99156

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4.6A, Rds On (Max) @ Id, Vgs: 40 mOhm @ 6.4A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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SI4532ADY-T1-E3

Vishay Siliconix

SI4532ADY-T1-E3

Sehemu ya hisa.: 139238

Aina ya FET: N and P-Channel, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.7A, 3A, Rds On (Max) @ Id, Vgs: 53 mOhm @ 4.9A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

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Vishay Siliconix

SI5513DC-T1-E3

Sehemu ya hisa.: 2794

Aina ya FET: N and P-Channel, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.1A, 2.1A, Rds On (Max) @ Id, Vgs: 75 mOhm @ 3.1A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

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Vishay Siliconix

SI5947DU-T1-E3

Sehemu ya hisa.: 2793

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6A, Rds On (Max) @ Id, Vgs: 58 mOhm @ 3.6A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

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Vishay Siliconix

SI7909DN-T1-E3

Sehemu ya hisa.: 2903

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 12V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5.3A, Rds On (Max) @ Id, Vgs: 37 mOhm @ 7.7A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 700µA,

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SIZ914DT-T1-GE3

Vishay Siliconix

SIZ914DT-T1-GE3

Sehemu ya hisa.: 89189

Aina ya FET: 2 N-Channel (Half Bridge), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 16A, 40A, Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 19A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

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SI4834BDY-T1-E3

Vishay Siliconix

SI4834BDY-T1-E3

Sehemu ya hisa.: 2745

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5.7A, Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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Vishay Siliconix

SIB911DK-T1-E3

Sehemu ya hisa.: 2804

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.6A, Rds On (Max) @ Id, Vgs: 295 mOhm @ 1.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

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SI7224DN-T1-GE3

Vishay Siliconix

SI7224DN-T1-GE3

Sehemu ya hisa.: 139892

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6A, Rds On (Max) @ Id, Vgs: 35 mOhm @ 6.5A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

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SMMB911DK-T1-GE3

Vishay Siliconix

SMMB911DK-T1-GE3

Sehemu ya hisa.: 2878

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.6A, Rds On (Max) @ Id, Vgs: 295 mOhm @ 1.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

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