Transistors - FETs, MOSFETs - safu | Bidhaa tofauti za semiconductor | 18

SI7964DP-T1-GE3

Sehemu ya hisa.: 2820

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6.1A, Rds On (Max) @ Id, Vgs: 23 mOhm @ 9.6A, 10V, Vgs (th) (Max) @ Id: 4.5V @ 250µA,

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SIA778DJ-T1-GE3

Sehemu ya hisa.: 103692

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 12V, 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4.5A, 1.5A, Rds On (Max) @ Id, Vgs: 29 mOhm @ 5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

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SIF902EDZ-T1-E3

Sehemu ya hisa.: 2784

Aina ya FET: 2 N-Channel (Dual) Common Drain, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 7A, Rds On (Max) @ Id, Vgs: 22 mOhm @ 7A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

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SI5905BDC-T1-GE3

Sehemu ya hisa.: 3293

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 8V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4A, Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.3A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

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SI7911DN-T1-E3

Sehemu ya hisa.: 2776

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4.2A, Rds On (Max) @ Id, Vgs: 51 mOhm @ 5.7A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

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SI8901EDB-T2-E1

Sehemu ya hisa.: 2810

Aina ya FET: 2 P-Channel (Dual) Common Drain, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.5A, Vgs (th) (Max) @ Id: 1V @ 350µA,

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SI7948DP-T1-GE3

Sehemu ya hisa.: 3297

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3A, Rds On (Max) @ Id, Vgs: 75 mOhm @ 4.6A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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SIA911DJ-T1-E3

Sehemu ya hisa.: 2797

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4.5A, Rds On (Max) @ Id, Vgs: 94 mOhm @ 2.8A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

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SI6928DQ-T1-E3

Sehemu ya hisa.: 2806

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4A, Rds On (Max) @ Id, Vgs: 35 mOhm @ 4A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

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SIA914ADJ-T1-GE3

Sehemu ya hisa.: 101260

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4.5A, Rds On (Max) @ Id, Vgs: 43 mOhm @ 3.7A, 4.5V, Vgs (th) (Max) @ Id: 900mV @ 250µA,

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SI3529DV-T1-E3

Sehemu ya hisa.: 2823

Aina ya FET: N and P-Channel, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.5A, 1.95A, Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.2A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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SI4834BDY-T1-GE3

Sehemu ya hisa.: 2808

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5.7A, Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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SI4569DY-T1-E3

Sehemu ya hisa.: 2765

Aina ya FET: N and P-Channel, Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 7.6A, 7.9A, Rds On (Max) @ Id, Vgs: 27 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

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SI5915DC-T1-GE3

Sehemu ya hisa.: 2892

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 8V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.4A, Rds On (Max) @ Id, Vgs: 70 mOhm @ 3.4A, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 250µA (Min),

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SI7925DN-T1-GE3

Sehemu ya hisa.: 2863

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 12V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4.8A, Rds On (Max) @ Id, Vgs: 42 mOhm @ 6.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

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SIZ700DT-T1-GE3

Sehemu ya hisa.: 110609

Aina ya FET: 2 N-Channel (Half Bridge), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 16A, Rds On (Max) @ Id, Vgs: 8.6 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

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SI3588DV-T1-GE3

Sehemu ya hisa.: 2780

Aina ya FET: N and P-Channel, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.5A, 570mA, Rds On (Max) @ Id, Vgs: 80 mOhm @ 3A, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 250µA (Min),

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SI7540DP-T1-E3

Sehemu ya hisa.: 2781

Aina ya FET: N and P-Channel, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 12V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 7.6A, 5.7A, Rds On (Max) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

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SI4562DY-T1-GE3

Sehemu ya hisa.: 2828

Aina ya FET: N and P-Channel, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.1A, 4.5V, Vgs (th) (Max) @ Id: 1.6V @ 250µA,

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SQJ962EP-T1-GE3

Sehemu ya hisa.: 3339

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 8A, Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.3A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

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SI4562DY-T1-E3

Sehemu ya hisa.: 2860

Aina ya FET: N and P-Channel, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.1A, 4.5V, Vgs (th) (Max) @ Id: 1.6V @ 250µA,

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SI3983DV-T1-E3

Sehemu ya hisa.: 2699

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.1A, Rds On (Max) @ Id, Vgs: 110 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 1.1V @ 250µA,

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SIA913DJ-T1-GE3

Sehemu ya hisa.: 2844

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 12V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4.5A, Rds On (Max) @ Id, Vgs: 70 mOhm @ 3.3A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

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SI3983DV-T1-GE3

Sehemu ya hisa.: 2859

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.1A, Rds On (Max) @ Id, Vgs: 110 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 1.1V @ 250µA,

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SI5515DC-T1-E3

Sehemu ya hisa.: 153398

Aina ya FET: N and P-Channel, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4.4A, 3A, Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.4A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

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SI1557DH-T1-E3

Sehemu ya hisa.: 2849

Aina ya FET: N and P-Channel, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 12V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.2A, 770mA, Rds On (Max) @ Id, Vgs: 235 mOhm @ 1.2A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 100µA,

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VQ1006P

Sehemu ya hisa.: 2955

Aina ya FET: 4 N-Channel, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 90V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 400mA, Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 1A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

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SIA513DJ-T1-GE3

Sehemu ya hisa.: 2783

Aina ya FET: N and P-Channel, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4.5A, Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.4A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

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VQ3001P-E3

Sehemu ya hisa.: 2909

Aina ya FET: 2 N and 2 P-Channel, Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 850mA, 600mA, Rds On (Max) @ Id, Vgs: 1 Ohm @ 1A, 12V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

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SI7946DP-T1-E3

Sehemu ya hisa.: 2803

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 150V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.1A, Rds On (Max) @ Id, Vgs: 150 mOhm @ 3.3A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

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SI4952DY-T1-E3

Sehemu ya hisa.: 3283

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 25V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 8A, Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

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SIF912EDZ-T1-E3

Sehemu ya hisa.: 3336

Aina ya FET: 2 N-Channel (Dual) Common Drain, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 7.4A, Rds On (Max) @ Id, Vgs: 19 mOhm @ 7.4A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

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SI4501ADY-T1-GE3

Sehemu ya hisa.: 2879

Aina ya FET: N and P-Channel, Common Drain, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, 8V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6.3A, 4.1A, Rds On (Max) @ Id, Vgs: 18 mOhm @ 8.8A, 10V, Vgs (th) (Max) @ Id: 1.8V @ 250µA,

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SI1958DH-T1-E3

Sehemu ya hisa.: 2701

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.3A, Rds On (Max) @ Id, Vgs: 205 mOhm @ 1.3A, 4.5V, Vgs (th) (Max) @ Id: 1.6V @ 250µA,

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SI4908DY-T1-E3

Sehemu ya hisa.: 2706

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5A, Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.1A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

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SI4947ADY-T1-E3

Sehemu ya hisa.: 2709

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3A, Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.9A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

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