Diode - Warekebishaji - Moja

Nyumbani
Diode - Warekebishaji - Moja

Vishay Semiconductor Diodes Division

BYG10M-M3/TR

Sehemu ya hisa.: 183725

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 1000V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.15V @ 1.5A, Kasi: Standard Recovery >500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 4µs,

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Vishay Semiconductor Diodes Division

BYG20JHE3_A/I

Sehemu ya hisa.: 115069

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.4V @ 1.5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 75ns,

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Vishay Semiconductor Diodes Division

BYG10G-E3/TR3

Sehemu ya hisa.: 197411

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.15V @ 1.5A, Kasi: Standard Recovery >500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 4µs,

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Vishay Semiconductor Diodes Division

BYG22AHM3_A/H

Sehemu ya hisa.: 133472

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 50V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.1V @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 25ns,

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Vishay Semiconductor Diodes Division

BYG22AHE3_A/I

Sehemu ya hisa.: 189054

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 50V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.1V @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 25ns,

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Vishay Semiconductor Diodes Division

BYG22AHE3_A/H

Sehemu ya hisa.: 154231

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 50V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.1V @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 25ns,

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Vishay Semiconductor Diodes Division

BYG24GHM3_A/H

Sehemu ya hisa.: 129432

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.25V @ 1.5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 140ns,

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Vishay Semiconductor Diodes Division

BYG20JHM3_A/I

Sehemu ya hisa.: 181553

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.4V @ 1.5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 75ns,

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Vishay Semiconductor Diodes Division

BYG23MHE3_A/H

Sehemu ya hisa.: 177768

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 1000V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.7V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 75ns,

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Vishay Semiconductor Diodes Division

BYG24DHM3_A/I

Sehemu ya hisa.: 144093

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.25V @ 1.5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 140ns,

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Vishay Semiconductor Diodes Division

BYG10J-E3/TR3

Sehemu ya hisa.: 138230

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.15V @ 1.5A, Kasi: Standard Recovery >500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 4µs,

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Vishay Semiconductor Diodes Division

BYG24J-M3/TR3

Sehemu ya hisa.: 163164

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.25V @ 1.5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 140ns,

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Vishay Semiconductor Diodes Division

BYG20G-E3/TR3

Sehemu ya hisa.: 107656

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.4V @ 1.5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 75ns,

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Vishay Semiconductor Diodes Division

BYG21MHE3_A/H

Sehemu ya hisa.: 135582

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 1000V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.6V @ 1.5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 120ns,

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Vishay Semiconductor Diodes Division

BYG22DHM3_A/H

Sehemu ya hisa.: 187643

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.1V @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 25ns,

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Vishay Semiconductor Diodes Division

BYG10KHE3_A/I

Sehemu ya hisa.: 141453

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 800V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.15V @ 1.5A, Kasi: Standard Recovery >500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 4µs,

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Vishay Semiconductor Diodes Division

BYG10JHM3_A/H

Sehemu ya hisa.: 151105

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.15V @ 1.5A, Kasi: Standard Recovery >500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 4µs,

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Vishay Semiconductor Diodes Division

BYG24DHE3_A/I

Sehemu ya hisa.: 110757

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.25V @ 1.5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 140ns,

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Vishay Semiconductor Diodes Division

BYG10KHM3_A/I

Sehemu ya hisa.: 163338

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 800V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.15V @ 1.5A, Kasi: Standard Recovery >500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 4µs,

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Vishay Semiconductor Diodes Division

BYG21KHM3_A/H

Sehemu ya hisa.: 160116

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 800V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.6V @ 1.5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 120ns,

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Vishay Semiconductor Diodes Division

BYG22D-M3/TR3

Sehemu ya hisa.: 174275

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.1V @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 25ns,

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Vishay Semiconductor Diodes Division

BYG22BHE3_A/I

Sehemu ya hisa.: 159460

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 100V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.1V @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 25ns,

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Vishay Semiconductor Diodes Division

BYG20GHE3_A/I

Sehemu ya hisa.: 116335

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.4V @ 1.5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 75ns,

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Vishay Semiconductor Diodes Division

BYG21KHE3_A/H

Sehemu ya hisa.: 199885

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 800V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.6V @ 1.5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 120ns,

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Vishay Semiconductor Diodes Division

BYG10DHM3_A/H

Sehemu ya hisa.: 187956

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.15V @ 1.5A, Kasi: Standard Recovery >500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 4µs,

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Vishay Semiconductor Diodes Division

BYG22B-M3/TR

Sehemu ya hisa.: 199372

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 100V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.1V @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 25ns,

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Vishay Semiconductor Diodes Division

BYG24GHE3_A/I

Sehemu ya hisa.: 176378

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.25V @ 1.5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 140ns,

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Vishay Semiconductor Diodes Division

BYG20JHM3_A/H

Sehemu ya hisa.: 183930

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.4V @ 1.5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 75ns,

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Vishay Semiconductor Diodes Division

BYG24D-M3/TR

Sehemu ya hisa.: 155546

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.25V @ 1.5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 140ns,

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Vishay Semiconductor Diodes Division

BYG21KHE3_A/I

Sehemu ya hisa.: 125757

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 800V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.6V @ 1.5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 120ns,

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Vishay Semiconductor Diodes Division

BYG20DHE3_A/H

Sehemu ya hisa.: 196711

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.4V @ 1.5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 75ns,

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Vishay Semiconductor Diodes Division

BYG10GHM3_A/I

Sehemu ya hisa.: 186120

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.15V @ 1.5A, Kasi: Standard Recovery >500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 4µs,

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Vishay Semiconductor Diodes Division

BYG20DHM3_A/H

Sehemu ya hisa.: 139157

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.4V @ 1.5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 75ns,

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Vishay Semiconductor Diodes Division

BYG22DHE3_A/I

Sehemu ya hisa.: 185358

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.1V @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 25ns,

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Vishay Semiconductor Diodes Division

BYG10MHE3_A/H

Sehemu ya hisa.: 310

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 1000V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.15V @ 1.5A, Kasi: Standard Recovery >500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 4µs,

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Vishay Semiconductor Diodes Division

BYG10K-M3/TR

Sehemu ya hisa.: 195437

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 800V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.15V @ 1.5A, Kasi: Standard Recovery >500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 4µs,

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3600

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