Diode - Warekebishaji - Moja | Bidhaa tofauti za semiconductor | 100

BYG24G-M3/TR

Sehemu ya hisa.: 160213

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.25V @ 1.5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 140ns,

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Vishay Semiconductor Diodes Division

BYG22D-E3/TR

Sehemu ya hisa.: 141773

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.1V @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 25ns,

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Vishay Semiconductor Diodes Division

BYG24D-M3/TR3

Sehemu ya hisa.: 131968

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.25V @ 1.5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 140ns,

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Vishay Semiconductor Diodes Division

BYG10M-E3/TR3

Sehemu ya hisa.: 182415

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 1000V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.15V @ 1.5A, Kasi: Standard Recovery >500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 4µs,

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Vishay Semiconductor Diodes Division

BYG10M-M3/TR3

Sehemu ya hisa.: 178714

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 1000V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.15V @ 1.5A, Kasi: Standard Recovery >500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 4µs,

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Vishay Semiconductor Diodes Division

BYG22D-E3/TR3

Sehemu ya hisa.: 104636

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.1V @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 25ns,

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Vishay Semiconductor Diodes Division

BYG24GHE3_A/H

Sehemu ya hisa.: 136458

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.25V @ 1.5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 140ns,

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Vishay Semiconductor Diodes Division

BYG23MHM3_A/H

Sehemu ya hisa.: 128490

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 1000V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.7V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 75ns,

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Vishay Semiconductor Diodes Division

BYG23T-M3/TR3

Sehemu ya hisa.: 129800

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 1300V, Sasa - Wastani Waliyorekebishwa (Io): 1A (DC), Voltage - Sambaza (Vf) (Max) @ Kama: 1.9V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 75ns,

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Vishay Semiconductor Diodes Division

BYG10JHE3_A/I

Sehemu ya hisa.: 120649

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.15V @ 1.5A, Kasi: Standard Recovery >500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 4µs,

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Vishay Semiconductor Diodes Division

BYG20DHM3_A/I

Sehemu ya hisa.: 155324

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.4V @ 1.5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 75ns,

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Vishay Semiconductor Diodes Division

BYG10JHM3_A/I

Sehemu ya hisa.: 188118

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.15V @ 1.5A, Kasi: Standard Recovery >500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 4µs,

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Vishay Semiconductor Diodes Division

BYG22BHE3_A/H

Sehemu ya hisa.: 135545

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 100V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.1V @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 25ns,

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Vishay Semiconductor Diodes Division

BYG10G-M3/TR

Sehemu ya hisa.: 137182

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.15V @ 1.5A, Kasi: Standard Recovery >500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 4µs,

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Vishay Semiconductor Diodes Division

BYG10JHE3_A/H

Sehemu ya hisa.: 196477

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.15V @ 1.5A, Kasi: Standard Recovery >500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 4µs,

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Vishay Semiconductor Diodes Division

BYG20D-M3/TR

Sehemu ya hisa.: 116559

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.4V @ 1.5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 75ns,

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Vishay Semiconductor Diodes Division

BYG20GHE3_A/H

Sehemu ya hisa.: 167113

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.4V @ 1.5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 75ns,

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Vishay Semiconductor Diodes Division

BYG10DHE3_A/I

Sehemu ya hisa.: 151425

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.15V @ 1.5A, Kasi: Standard Recovery >500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 4µs,

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Vishay Semiconductor Diodes Division

BYG10J-M3/TR3

Sehemu ya hisa.: 167334

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.15V @ 1.5A, Kasi: Standard Recovery >500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 4µs,

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Vishay Semiconductor Diodes Division

BYG20G-M3/TR3

Sehemu ya hisa.: 177836

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.4V @ 1.5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 75ns,

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Vishay Semiconductor Diodes Division

BYG10K-E3/TR

Sehemu ya hisa.: 116100

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 800V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.15V @ 1.5A, Kasi: Standard Recovery >500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 4µs,

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Vishay Semiconductor Diodes Division

BYG22A-M3/TR

Sehemu ya hisa.: 126510

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 50V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.1V @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 25ns,

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Vishay Semiconductor Diodes Division

BYG10KHM3_A/H

Sehemu ya hisa.: 113240

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 800V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.15V @ 1.5A, Kasi: Standard Recovery >500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 4µs,

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Vishay Semiconductor Diodes Division

BYG10D-E3/TR3

Sehemu ya hisa.: 197556

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.15V @ 1.5A, Kasi: Standard Recovery >500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 4µs,

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Vishay Semiconductor Diodes Division

BYG10MHM3_A/I

Sehemu ya hisa.: 112695

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 1000V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.15V @ 1.5A, Kasi: Standard Recovery >500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 4µs,

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Vishay Semiconductor Diodes Division

BYG20GHM3_A/H

Sehemu ya hisa.: 164441

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.4V @ 1.5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 75ns,

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Vishay Semiconductor Diodes Division

BYG20G-M3/TR

Sehemu ya hisa.: 174425

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.4V @ 1.5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 75ns,

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Vishay Semiconductor Diodes Division

BYG10K-M3/TR3

Sehemu ya hisa.: 199071

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 800V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.15V @ 1.5A, Kasi: Standard Recovery >500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 4µs,

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Vishay Semiconductor Diodes Division

BYG23M-M3/TR3

Sehemu ya hisa.: 120482

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 1000V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.7V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 75ns,

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Vishay Semiconductor Diodes Division

BYG24JHM3_A/H

Sehemu ya hisa.: 162395

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.25V @ 1.5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 140ns,

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Vishay Semiconductor Diodes Division

BYG24J-E3/TR3

Sehemu ya hisa.: 109092

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.25V @ 1.5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 140ns,

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Vishay Semiconductor Diodes Division

BYG21K-M3/TR

Sehemu ya hisa.: 111717

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 800V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.6V @ 1.5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 120ns,

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Vishay Semiconductor Diodes Division

BYG20J-M3/TR3

Sehemu ya hisa.: 162156

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.4V @ 1.5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 75ns,

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Vishay Semiconductor Diodes Division

BYG10DHM3_A/I

Sehemu ya hisa.: 131985

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.15V @ 1.5A, Kasi: Standard Recovery >500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 4µs,

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Vishay Semiconductor Diodes Division

BYG24J-M3/TR

Sehemu ya hisa.: 142403

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.25V @ 1.5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 140ns,

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Vishay Semiconductor Diodes Division

BYG10MHE3_A/I

Sehemu ya hisa.: 178334

Aina ya Diode: Avalanche, Voltage - Kubadilisha DC (Vr) (Max): 1000V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.15V @ 1.5A, Kasi: Standard Recovery >500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 4µs,

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