Transistors - FETs, MOSFETs - safu | Bidhaa tofauti za semiconductor | 100

SI5933DC-T1-GE3

Sehemu ya hisa.: 2867

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.7A, Rds On (Max) @ Id, Vgs: 110 mOhm @ 2.7A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Kwa wishlist.

Vishay Siliconix

SI4563DY-T1-E3

Sehemu ya hisa.: 2704

Aina ya FET: N and P-Channel, Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 8A, Rds On (Max) @ Id, Vgs: 16 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

Kwa wishlist.

Vishay Siliconix

SI6969BDQ-T1-E3

Sehemu ya hisa.: 2784

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 12V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4A, Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.6A, 4.5V, Vgs (th) (Max) @ Id: 800mV @ 250µA,

Kwa wishlist.

Vishay Siliconix

VQ1006P-E3

Sehemu ya hisa.: 2906

Aina ya FET: 4 N-Channel, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 90V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 400mA, Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 1A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Kwa wishlist.

Vishay Siliconix

SI4942DY-T1-E3

Sehemu ya hisa.: 2870

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5.3A, Rds On (Max) @ Id, Vgs: 21 mOhm @ 7.4A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Kwa wishlist.

Vishay Siliconix

SI4940DY-T1-GE3

Sehemu ya hisa.: 2808

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4.2A, Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.7A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

Kwa wishlist.

Vishay Siliconix

SI4816DY-T1-E3

Sehemu ya hisa.: 2905

Aina ya FET: 2 N-Channel (Half Bridge), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5.3A, 7.7A, Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.3A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

Kwa wishlist.

Vishay Siliconix

SI5509DC-T1-E3

Sehemu ya hisa.: 2749

Aina ya FET: N and P-Channel, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6.1A, 4.8A, Rds On (Max) @ Id, Vgs: 52 mOhm @ 5A, 4.5V, Vgs (th) (Max) @ Id: 2V @ 250µA,

Kwa wishlist.

Vishay Siliconix

SI4914BDY-T1-GE3

Sehemu ya hisa.: 118908

Aina ya FET: 2 N-Channel (Half Bridge), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 8.4A, 8A, Rds On (Max) @ Id, Vgs: 21 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.7V @ 250µA,

Kwa wishlist.

Vishay Siliconix

SI4967DY-T1-E3

Sehemu ya hisa.: 2883

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 12V, Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.5A, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 250µA (Min),

Kwa wishlist.

Vishay Siliconix

SI4940DY-T1-E3

Sehemu ya hisa.: 2875

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4.2A, Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.7A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

Kwa wishlist.

Vishay Siliconix

SI3529DV-T1-GE3

Sehemu ya hisa.: 2831

Aina ya FET: N and P-Channel, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.5A, 1.95A, Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.2A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Kwa wishlist.

ON Semiconductor

FDMC8200S_F106

Sehemu ya hisa.: 3352

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6A, 8.5A, Rds On (Max) @ Id, Vgs: 20 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Kwa wishlist.

ON Semiconductor

FW812-TL-E

Sehemu ya hisa.: 2832

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 35V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 10A, Rds On (Max) @ Id, Vgs: 17 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.6V @ 1mA,

Kwa wishlist.

ON Semiconductor

NTLUD3191PZTBG

Sehemu ya hisa.: 2826

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.1A, Rds On (Max) @ Id, Vgs: 250 mOhm @ 1.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Kwa wishlist.

ON Semiconductor

FDS8962C

Sehemu ya hisa.: 2774

Aina ya FET: N and P-Channel, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 7A, 5A, Rds On (Max) @ Id, Vgs: 30 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Kwa wishlist.

ON Semiconductor

NTMC1300R2

Sehemu ya hisa.: 3306

Aina ya FET: N and P-Channel, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.2A, 1.8A, Rds On (Max) @ Id, Vgs: 90 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

Kwa wishlist.

ON Semiconductor

FDW9926NZ

Sehemu ya hisa.: 2770

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4.5A, Rds On (Max) @ Id, Vgs: 32 mOhm @ 4.5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Kwa wishlist.

ON Semiconductor

FDR8308P

Sehemu ya hisa.: 2748

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.2A, Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.2A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Kwa wishlist.

ON Semiconductor

EMH2407-TL-H

Sehemu ya hisa.: 165186

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6A, Rds On (Max) @ Id, Vgs: 25 mOhm @ 3A, 4.5V,

Kwa wishlist.

Diodes Incorporated

ZXMD65P03N8TA

Sehemu ya hisa.: 2983

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.8A, Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.9A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

Kwa wishlist.

Diodes Incorporated

ZXMD63P03XTC

Sehemu ya hisa.: 2768

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Rds On (Max) @ Id, Vgs: 185 mOhm @ 1.2A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

Kwa wishlist.

Diodes Incorporated

ZXMN10A08DN8TC

Sehemu ya hisa.: 2701

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.6A, Rds On (Max) @ Id, Vgs: 250 mOhm @ 3.2A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA (Min),

Kwa wishlist.

Infineon Technologies

IRF7350PBF

Sehemu ya hisa.: 2677

Aina ya FET: N and P-Channel, Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.1A, 1.5A, Rds On (Max) @ Id, Vgs: 210 mOhm @ 2.1A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

Kwa wishlist.

Infineon Technologies

IRF7317PBF

Sehemu ya hisa.: 75561

Aina ya FET: N and P-Channel, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6.6A, 5.3A, Rds On (Max) @ Id, Vgs: 29 mOhm @ 6A, 4.5V, Vgs (th) (Max) @ Id: 700mV @ 250µA,

Kwa wishlist.

Infineon Technologies

IRF7338PBF

Sehemu ya hisa.: 2697

Aina ya FET: N and P-Channel, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 12V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6.3A, 3A, Rds On (Max) @ Id, Vgs: 34 mOhm @ 6A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Kwa wishlist.

Toshiba Semiconductor and Storage

TPCP8203(TE85L,F)

Sehemu ya hisa.: 2780

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4.7A, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Kwa wishlist.

Toshiba Semiconductor and Storage

SSM6N7002BFE(T5L,F

Sehemu ya hisa.: 2844

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 200mA, Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 3.1V @ 250µA,

Kwa wishlist.

Rohm Semiconductor

MP6M11TCR

Sehemu ya hisa.: 2920

Aina ya FET: N and P-Channel, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.5A, Rds On (Max) @ Id, Vgs: 98 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Kwa wishlist.

Rohm Semiconductor

MP6K14TCR

Sehemu ya hisa.: 2899

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 8A, Rds On (Max) @ Id, Vgs: 25 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Kwa wishlist.

Rohm Semiconductor

SP8M51TB1

Sehemu ya hisa.: 2655

Aina ya FET: N and P-Channel, Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3A, 2.5A,

Kwa wishlist.

Texas Instruments

CSD75208W1015T

Sehemu ya hisa.: 192795

Aina ya FET: 2 P-Channel (Dual) Common Source, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.6A, Rds On (Max) @ Id, Vgs: 68 mOhm @ 1A, 4.5V, Vgs (th) (Max) @ Id: 1.1V @ 250µA,

Kwa wishlist.

STMicroelectronics

STS1DN45K3

Sehemu ya hisa.: 2689

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 450V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 500mA, Rds On (Max) @ Id, Vgs: 3.8 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 4.5V @ 50µA,

Kwa wishlist.

EPC

EPC2103

Sehemu ya hisa.: 23026

Aina ya FET: 2 N-Channel (Half Bridge), Makala ya FET: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 80V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 28A, Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 20A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 7mA,

Kwa wishlist.

EPC

EPC2105

Sehemu ya hisa.: 24303

Aina ya FET: 2 N-Channel (Half Bridge), Makala ya FET: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 80V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 9.5A, 38A, Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 20A, 5V, 3.4 mOhm @ 20A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 2.5mA, 2.5V @ 10mA,

Kwa wishlist.

IXYS

GWM120-0075X1-SMDSAM

Sehemu ya hisa.: 2788

Aina ya FET: 6 N-Channel (3-Phase Bridge), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 75V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 110A, Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 60A, 10V, Vgs (th) (Max) @ Id: 4V @ 1mA,

Kwa wishlist.