Transistors - FETs, MOSFETs - safu

VEC2616-TL-W-Z

Sehemu ya hisa.: 199667

Aina ya FET: N and P-Channel, Makala ya FET: Logic Level Gate, 4V Drive, Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3A, 2.5A, Rds On (Max) @ Id, Vgs: 80 mOhm @ 1.5A, 10V, Vgs (th) (Max) @ Id: 2.6V @ 1mA,

NTHD3100CT3G

Sehemu ya hisa.: 2772

Aina ya FET: N and P-Channel, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.9A, 3.2A, Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.9A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

NTZD3156CT2G

Sehemu ya hisa.: 2761

Aina ya FET: N and P-Channel, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 540mA, 430mA, Rds On (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

FDW2507N

Sehemu ya hisa.: 2689

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 7.5A, Rds On (Max) @ Id, Vgs: 19 mOhm @ 7.5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

FDW2501N

Sehemu ya hisa.: 2746

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6A, Rds On (Max) @ Id, Vgs: 18 mOhm @ 6A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

FDW2508PB

Sehemu ya hisa.: 2726

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 12V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6A, Rds On (Max) @ Id, Vgs: 18 mOhm @ 6A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

FDZ2554PZ

Sehemu ya hisa.: 2723

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6.5A, Rds On (Max) @ Id, Vgs: 28 mOhm @ 6.5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

NDS8858H

Sehemu ya hisa.: 2706

Aina ya FET: N and P-Channel, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6.3A, 4.8A, Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.8A, 10V, Vgs (th) (Max) @ Id: 2.8V @ 250µA,

NTZD3156CT5G

Sehemu ya hisa.: 2782

Aina ya FET: N and P-Channel, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 540mA, 430mA, Rds On (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

NVMFD5875NLWFT3G

Sehemu ya hisa.: 166888

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 7A, Rds On (Max) @ Id, Vgs: 33 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

FDMS3604AS

Sehemu ya hisa.: 3375

Aina ya FET: 2 N-Channel (Dual) Asymmetrical, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 13A, 23A, Rds On (Max) @ Id, Vgs: 8 mOhm @ 13A, 10V, Vgs (th) (Max) @ Id: 2.7V @ 250µA,

NTJD2152PT2G

Sehemu ya hisa.: 2773

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 8V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 775mA, Rds On (Max) @ Id, Vgs: 300 mOhm @ 570mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

EFC6602R-A-TR

Sehemu ya hisa.: 185435

Aina ya FET: 2 N-Channel (Dual) Common Drain, Makala ya FET: Logic Level Gate, 2.5V Drive,

FDS3912

Sehemu ya hisa.: 2754

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3A, Rds On (Max) @ Id, Vgs: 125 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

EFC6617R-A-TF

Sehemu ya hisa.: 135371

NTHD4401PT1G

Sehemu ya hisa.: 2836

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.1A, Rds On (Max) @ Id, Vgs: 155 mOhm @ 2.1A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

SI4972DY-T1-GE3

Sehemu ya hisa.: 2881

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 10.8A, 7.2A, Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

VQ1001P-E3

Sehemu ya hisa.: 2920

Aina ya FET: 4 N-Channel, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 830mA, Rds On (Max) @ Id, Vgs: 1.75 Ohm @ 200mA, 5V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

SI7958DP-T1-GE3

Sehemu ya hisa.: 2819

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 7.2A, Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 11.3A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

SI6933DQ-T1-GE3

Sehemu ya hisa.: 2892

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

SI4973DY-T1-GE3

Sehemu ya hisa.: 2865

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5.8A, Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.6A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

SI7983DP-T1-GE3

Sehemu ya hisa.: 2899

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 7.7A, Rds On (Max) @ Id, Vgs: 17 mOhm @ 12A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 600µA,

SI1563EDH-T1-E3

Sehemu ya hisa.: 2699

Aina ya FET: N and P-Channel, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.13A, 880mA, Rds On (Max) @ Id, Vgs: 280 mOhm @ 1.13A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 100µA,

SI1539DL-T1-E3

Sehemu ya hisa.: 2765

Aina ya FET: N and P-Channel, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 540mA, 420mA, Rds On (Max) @ Id, Vgs: 480 mOhm @ 590mA, 10V, Vgs (th) (Max) @ Id: 2.6V @ 250µA,

SI7844DP-T1-GE3

Sehemu ya hisa.: 2794

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6.4A, Rds On (Max) @ Id, Vgs: 22 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

SI4567DY-T1-E3

Sehemu ya hisa.: 2783

Aina ya FET: N and P-Channel, Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5A, 4.4A, Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.1A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

SI5906DU-T1-GE3

Sehemu ya hisa.: 2915

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6A, Rds On (Max) @ Id, Vgs: 31 mOhm @ 4.8A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

IRF7379TR

Sehemu ya hisa.: 2676

Aina ya FET: N and P-Channel, Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5.8A, 4.3A, Rds On (Max) @ Id, Vgs: 45 mOhm @ 5.8A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

IRF8910GTRPBF

Sehemu ya hisa.: 2869

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 10A, Rds On (Max) @ Id, Vgs: 13.4 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.55V @ 250µA,

IRFHM792TR2PBF

Sehemu ya hisa.: 2894

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.3A, Rds On (Max) @ Id, Vgs: 195 mOhm @ 2.9A, 10V, Vgs (th) (Max) @ Id: 4V @ 10µA,

IRF7103PBF

Sehemu ya hisa.: 97659

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 50V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3A, Rds On (Max) @ Id, Vgs: 130 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

HAT2092R-EL-E

Sehemu ya hisa.: 2741

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 11A, Rds On (Max) @ Id, Vgs: 16 mOhm @ 5.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

TPC8211(TE12L,Q,M)

Sehemu ya hisa.: 2801

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5.5A, Rds On (Max) @ Id, Vgs: 36 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

TPC8213-H(TE12LQ,M

Sehemu ya hisa.: 2813

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5A, Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.5A, 10V, Vgs (th) (Max) @ Id: 2.3V @ 1mA,

DMC6070LFDH-7

Sehemu ya hisa.: 2890

Aina ya FET: N and P-Channel, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.1A, 2.4A, Rds On (Max) @ Id, Vgs: 85 mOhm @ 1.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

UP04979G0L

Sehemu ya hisa.: 2769

Aina ya FET: N and P-Channel, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 50V, 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 100mA, Rds On (Max) @ Id, Vgs: 12 Ohm @ 10mA, 4V, Vgs (th) (Max) @ Id: 1.5V @ 1µA,