Transistors - FETs, MOSFETs - safu

QJD1210010

Sehemu ya hisa.: 2869

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Silicon Carbide (SiC), Futa kwa Chanzo cha Voltage (Vdss): 1200V (1.2kV), Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 100A (Tc), Rds On (Max) @ Id, Vgs: 25 mOhm @ 100A, 20V, Vgs (th) (Max) @ Id: 5V @ 10mA,

QJD1210SA1

Sehemu ya hisa.: 2941

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 1200V (1.2kV), Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 100A, Rds On (Max) @ Id, Vgs: 17 mOhm @ 100A, 15V, Vgs (th) (Max) @ Id: 1.6V @ 34mA,

HCT802TX

Sehemu ya hisa.: 1374

Aina ya FET: N and P-Channel, Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 90V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2A, 1.1A, Rds On (Max) @ Id, Vgs: 5 Ohm @ 1A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

ZXMD63C02XTC

Sehemu ya hisa.: 2674

Aina ya FET: N and P-Channel, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Rds On (Max) @ Id, Vgs: 130 mOhm @ 1.7A, 4.5V, Vgs (th) (Max) @ Id: 700mV @ 250µA (Min),

DMP2240UDM-7

Sehemu ya hisa.: 152559

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2A, Rds On (Max) @ Id, Vgs: 150 mOhm @ 2A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

SI4500BDY-T1-E3

Sehemu ya hisa.: 2701

Aina ya FET: N and P-Channel, Common Drain, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6.6A, 3.8A, Rds On (Max) @ Id, Vgs: 20 mOhm @ 9.1A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

SI3909DV-T1-E3

Sehemu ya hisa.: 2856

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.8A, 4.5V, Vgs (th) (Max) @ Id: 500mV @ 250µA (Min),

SI4830CDY-T1-GE3

Sehemu ya hisa.: 135529

Aina ya FET: 2 N-Channel (Half Bridge), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 8A, Rds On (Max) @ Id, Vgs: 20 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 3V @ 1mA,

SI9933BDY-T1-E3

Sehemu ya hisa.: 2801

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.6A, Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.7A, 4.5V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

SI1553DL-T1-E3

Sehemu ya hisa.: 2696

Aina ya FET: N and P-Channel, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 660mA, 410mA, Rds On (Max) @ Id, Vgs: 385 mOhm @ 660mA, 4.5V, Vgs (th) (Max) @ Id: 600mV @ 250µA (Min),

SI9945AEY-T1

Sehemu ya hisa.: 2814

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.7A, Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.7A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

SI1539DL-T1-GE3

Sehemu ya hisa.: 2837

Aina ya FET: N and P-Channel, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 540mA, 420mA, Rds On (Max) @ Id, Vgs: 480 mOhm @ 590mA, 10V, Vgs (th) (Max) @ Id: 2.6V @ 250µA,

SI4330DY-T1-GE3

Sehemu ya hisa.: 2810

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6.6A, Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 8.7A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

SI3905DV-T1-E3

Sehemu ya hisa.: 2795

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 8V, Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 250µA (Min),

SI7501DN-T1-GE3

Sehemu ya hisa.: 57296

Aina ya FET: N and P-Channel, Common Drain, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5.4A, 4.5A, Rds On (Max) @ Id, Vgs: 35 mOhm @ 7.7A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

SI5975DC-T1-GE3

Sehemu ya hisa.: 2853

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 12V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.1A, Rds On (Max) @ Id, Vgs: 86 mOhm @ 3.1A, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 1mA (Min),

SI6943BDQ-T1-GE3

Sehemu ya hisa.: 2834

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 12V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.3A, Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 800mV @ 250µA,

SI6963BDQ-T1-GE3

Sehemu ya hisa.: 2791

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.4A, Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.9A, 4.5V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

STS2DPF80

Sehemu ya hisa.: 2631

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 80V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2A, Rds On (Max) @ Id, Vgs: 250 mOhm @ 1A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

STS3C2F100

Sehemu ya hisa.: 2685

Aina ya FET: N and P-Channel, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3A, Rds On (Max) @ Id, Vgs: 145 mOhm @ 1.5A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

JANTX2N7335

Sehemu ya hisa.: 2875

Aina ya FET: 4 P-Channel, Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 750mA, Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

EPC2105ENG

Sehemu ya hisa.: 2911

Aina ya FET: 2 N-Channel (Half Bridge), Makala ya FET: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 80V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 9.5A, 38A, Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 20A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 2.5mA,

NDS9953A

Sehemu ya hisa.: 2676

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.9A, Rds On (Max) @ Id, Vgs: 130 mOhm @ 1A, 10V, Vgs (th) (Max) @ Id: 2.8V @ 250µA,

FDS3812

Sehemu ya hisa.: 2733

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 80V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.4A, Rds On (Max) @ Id, Vgs: 74 mOhm @ 3.4A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

FDG6320C_D87Z

Sehemu ya hisa.: 2690

Aina ya FET: N and P-Channel, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 25V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 220mA, 140mA, Rds On (Max) @ Id, Vgs: 4 Ohm @ 220mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

ECH8651R-R-TL-H

Sehemu ya hisa.: 2871

FDJ1028N

Sehemu ya hisa.: 2716

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.2A, Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.2A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

FDMA1029PZ

Sehemu ya hisa.: 178279

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.1A, Rds On (Max) @ Id, Vgs: 95 mOhm @ 3.1A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

IRF8513TRPBF

Sehemu ya hisa.: 2774

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 8A, 11A, Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.35V @ 25µA,

IRF7314PBF

Sehemu ya hisa.: 86093

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5.3A, Rds On (Max) @ Id, Vgs: 58 mOhm @ 2.9A, 4.5V, Vgs (th) (Max) @ Id: 700mV @ 250µA,

IRF7907PBF

Sehemu ya hisa.: 2738

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 9.1A, 11A, Rds On (Max) @ Id, Vgs: 16.4 mOhm @ 9.1A, 10V, Vgs (th) (Max) @ Id: 2.35V @ 25µA,

IRF9910PBF

Sehemu ya hisa.: 2659

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 10A, 12A, Rds On (Max) @ Id, Vgs: 13.4 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.55V @ 250µA,

IRF7754TRPBF

Sehemu ya hisa.: 2835

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 12V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5.5A, Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.4A, 4.5V, Vgs (th) (Max) @ Id: 900mV @ 250µA,

IRF9956TR

Sehemu ya hisa.: 2695

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.5A, Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

SP8K5TB

Sehemu ya hisa.: 2680

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.5A, Rds On (Max) @ Id, Vgs: 83 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

TPC8208(TE12L,Q)

Sehemu ya hisa.: 2694

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5A, Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.5A, 4V, Vgs (th) (Max) @ Id: 1.2V @ 200µA,