Transistors - FETs, MOSFETs - Moja | Bidhaa tofauti za semiconductor | 100

SI7668ADP-T1-E3

Sehemu ya hisa.: 1097

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 40A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 3 mOhm @ 25A, 10V,

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Vishay Siliconix

SI1305EDL-T1-GE3

Sehemu ya hisa.: 1068

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 8V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 860mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 280 mOhm @ 1A, 4.5V,

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Vishay Siliconix

SI4892DY-T1-GE3

Sehemu ya hisa.: 6159

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 8.8A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 12 mOhm @ 12.4A, 10V,

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Vishay Siliconix

SUP50N03-5M1P-GE3

Sehemu ya hisa.: 1048

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 50A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 5.1 mOhm @ 22A, 10V,

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Vishay Siliconix

SI2321DS-T1-GE3

Sehemu ya hisa.: 1000

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.9A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 57 mOhm @ 3.3A, 4.5V,

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Vishay Siliconix

SIE806DF-T1-GE3

Sehemu ya hisa.: 1144

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 60A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 25A, 10V,

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Vishay Siliconix

SUD50N04-16P-E3

Sehemu ya hisa.: 1087

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 9.8A (Ta), 20A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 16 mOhm @ 15A, 10V,

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Vishay Siliconix

SUM90N06-5M5P-E3

Sehemu ya hisa.: 1084

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 90A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 20A, 10V,

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Vishay Siliconix

SUD25N04-25-E3

Sehemu ya hisa.: 1138

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 25A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 25 mOhm @ 25A, 10V,

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Vishay Siliconix

SI4684DY-T1-E3

Sehemu ya hisa.: 5626

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 16A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 16A, 10V,

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Vishay Siliconix

SI1473DH-T1-GE3

Sehemu ya hisa.: 189304

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.7A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 10V,

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Vishay Siliconix

SI6467BDQ-T1-GE3

Sehemu ya hisa.: 982

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 12V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6.8A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 8A, 4.5V,

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Vishay Siliconix

SI8467DB-T2-E1

Sehemu ya hisa.: 978

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Voltage ya Kuendesha (Max Rds On, Min Rds On): 2.5V, 4.5V, Rds On (Max) @ Id, Vgs: 73 mOhm @ 1A, 4.5V,

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Vishay Siliconix

SUP65P04-15-E3

Sehemu ya hisa.: 1132

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 65A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 15 mOhm @ 30A, 10V,

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Vishay Siliconix

SI1037X-T1-E3

Sehemu ya hisa.: 1034

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 770mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 195 mOhm @ 770mA, 4.5V,

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Vishay Siliconix

SI8405DB-T1-E3

Sehemu ya hisa.: 1092

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 12V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.6A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 55 mOhm @ 1A, 4.5V,

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Vishay Siliconix

SI2331DS-T1-E3

Sehemu ya hisa.: 1016

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 12V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.2A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 48 mOhm @ 3.6A, 4.5V,

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Vishay Siliconix

SI7682DP-T1-E3

Sehemu ya hisa.: 1095

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 20A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 9 mOhm @ 20A, 10V,

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Vishay Siliconix

SUD50P08-26-E3

Sehemu ya hisa.: 1151

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 80V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 50A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 26 mOhm @ 12.9A, 10V,

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Vishay Siliconix

SI8451DB-T2-E1

Sehemu ya hisa.: 1016

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 10.8A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.5V, 4.5V, Rds On (Max) @ Id, Vgs: 80 mOhm @ 1A, 4.5V,

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Vishay Siliconix

SI4646DY-T1-GE3

Sehemu ya hisa.: 1077

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 12A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 10A, 10V,

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Vishay Siliconix

SI4472DY-T1-GE3

Sehemu ya hisa.: 58907

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 150V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 7.7A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 8V, 10V, Rds On (Max) @ Id, Vgs: 45 mOhm @ 5A, 10V,

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Vishay Siliconix

SI7457DP-T1-E3

Sehemu ya hisa.: 1075

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 28A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 42 mOhm @ 7.9A, 10V,

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Vishay Siliconix

SI3424BDV-T1-E3

Sehemu ya hisa.: 1074

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 8A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 28 mOhm @ 7A, 10V,

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Vishay Siliconix

SI4890BDY-T1-E3

Sehemu ya hisa.: 125213

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 16A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 12 mOhm @ 10A, 10V,

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Vishay Siliconix

SI2311DS-T1-E3

Sehemu ya hisa.: 1063

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 8V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.5A, 4.5V,

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Vishay Siliconix

SI4876DY-T1-GE3

Sehemu ya hisa.: 1057

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 14A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 2.5V, 4.5V, Rds On (Max) @ Id, Vgs: 5 mOhm @ 21A, 4.5V,

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Vishay Siliconix

SI3442CDV-T1-GE3

Sehemu ya hisa.: 143589

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 8A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 2.5V, 10V, Rds On (Max) @ Id, Vgs: 27 mOhm @ 6.5A, 10V,

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Vishay Siliconix

SI7100DN-T1-GE3

Sehemu ya hisa.: 1065

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 8V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 35A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 2.5V, 4.5V, Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 15A, 4.5V,

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Vishay Siliconix

SUP45N03-13L-E3

Sehemu ya hisa.: 1122

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 45A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 13 mOhm @ 45A, 10V,

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Vishay Siliconix

SI2334DS-T1-GE3

Sehemu ya hisa.: 120637

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4.9A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 2.5V, 4.5V, Rds On (Max) @ Id, Vgs: 44 mOhm @ 4.2A, 4.5V,

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Vishay Siliconix

SUM110P08-11-E3

Sehemu ya hisa.: 1107

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 80V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 110A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 11.1 mOhm @ 20A, 10V,

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Vishay Siliconix

SI6443DQ-T1-E3

Sehemu ya hisa.: 1034

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 7.3A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 12 mOhm @ 8.8A, 10V,

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Vishay Siliconix

SI4158DY-T1-GE3

Sehemu ya hisa.: 101225

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 36.5A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 20A, 10V,

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Vishay Siliconix

SI1307EDL-T1-GE3

Sehemu ya hisa.: 950

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 12V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 850mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 290 mOhm @ 1A, 4.5V,

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Vishay Siliconix

SI4362BDY-T1-E3

Sehemu ya hisa.: 1017

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 29A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 19.8A, 10V,

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