Transistors - FETs, MOSFETs - Moja | Bidhaa tofauti za semiconductor | 100

SI3457BDV-T1-GE3

Sehemu ya hisa.: 1070

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.7A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 54 mOhm @ 5A, 10V,

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Vishay Siliconix

SUD50N10-18P-GE3

Sehemu ya hisa.: 6176

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 8.2A (Ta), 50A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 18.5 mOhm @ 15A, 10V,

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Vishay Siliconix

SIJ458DP-T1-GE3

Sehemu ya hisa.: 77727

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 60A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 20A, 10V,

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Vishay Siliconix

IRLR110PBF

Sehemu ya hisa.: 72582

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4.3A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4V, 5V, Rds On (Max) @ Id, Vgs: 540 mOhm @ 2.6A, 5V,

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Vishay Siliconix

SI7413DN-T1-GE3

Sehemu ya hisa.: 1080

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 8.4A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 15 mOhm @ 13.2A, 4.5V,

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Vishay Siliconix

SI3434DV-T1-GE3

Sehemu ya hisa.: 1008

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4.6A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 2.5V, 4.5V, Rds On (Max) @ Id, Vgs: 34 mOhm @ 6.1A, 4.5V,

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Vishay Siliconix

SI4892DY-T1-E3

Sehemu ya hisa.: 1095

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 8.8A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 12 mOhm @ 12.4A, 10V,

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Vishay Siliconix

TP0202K-T1-GE3

Sehemu ya hisa.: 1159

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 385mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V,

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Vishay Siliconix

SI7452DP-T1-E3

Sehemu ya hisa.: 1051

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 11.5A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 19.3A, 10V,

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Vishay Siliconix

SUM110N08-07P-E3

Sehemu ya hisa.: 1050

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 75V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 110A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 7 mOhm @ 20A, 10V,

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Vishay Siliconix

SI6473DQ-T1-GE3

Sehemu ya hisa.: 1028

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6.2A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 9.5A, 4.5V,

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Vishay Siliconix

SI4446DY-T1-GE3

Sehemu ya hisa.: 1027

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.9A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 40 mOhm @ 5.2A, 10V,

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Vishay Siliconix

SI5481DU-T1-GE3

Sehemu ya hisa.: 1030

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 12A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.5A, 4.5V,

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Vishay Siliconix

SI6469DQ-T1-E3

Sehemu ya hisa.: 1049

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 8V, Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 28 mOhm @ 6A, 4.5V,

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Vishay Siliconix

SIE862DF-T1-GE3

Sehemu ya hisa.: 1131

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 50A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 20A, 10V,

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Vishay Siliconix

SI1305DL-T1-GE3

Sehemu ya hisa.: 936

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 8V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 860mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 280 mOhm @ 1A, 4.5V,

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Vishay Siliconix

IRF640PBF

Sehemu ya hisa.: 41932

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 18A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 10V,

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Vishay Siliconix

SI3446ADV-T1-GE3

Sehemu ya hisa.: 1066

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 2.5V, 4.5V, Rds On (Max) @ Id, Vgs: 37 mOhm @ 5.8A, 4.5V,

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Vishay Siliconix

IRFD9020PBF

Sehemu ya hisa.: 51289

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.6A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 280 mOhm @ 960mA, 10V,

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Vishay Siliconix

SIE860DF-T1-GE3

Sehemu ya hisa.: 996

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 60A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 21.7A, 10V,

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Vishay Siliconix

SI7440DP-T1-GE3

Sehemu ya hisa.: 1124

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 12A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 21A, 10V,

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Vishay Siliconix

IRFD9010PBF

Sehemu ya hisa.: 56821

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 50V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.1A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 500 mOhm @ 580mA, 10V,

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Vishay Siliconix

SIE836DF-T1-E3

Sehemu ya hisa.: 1127

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 18.3A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 130 mOhm @ 4.1A, 10V,

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Vishay Siliconix

SI7302DN-T1-GE3

Sehemu ya hisa.: 1117

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 220V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 8.4A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 320 mOhm @ 2.3A, 10V,

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Vishay Siliconix

SI7462DP-T1-GE3

Sehemu ya hisa.: 961

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.6A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 130 mOhm @ 4.1A, 10V,

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Vishay Siliconix

SI1413EDH-T1-GE3

Sehemu ya hisa.: 949

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.3A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 115 mOhm @ 2.9A, 4.5V,

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Vishay Siliconix

SI2302ADS-T1-GE3

Sehemu ya hisa.: 1071

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.1A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 2.5V, 4.5V, Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.6A, 4.5V,

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Vishay Siliconix

SIA467EDJ-T1-GE3

Sehemu ya hisa.: 193063

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 12V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 31A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 13 mOhm @ 5A, 4.5V,

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Vishay Siliconix

SI9434BDY-T1-GE3

Sehemu ya hisa.: 1056

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4.5A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 2.5V, 4.5V, Rds On (Max) @ Id, Vgs: 40 mOhm @ 6.3A, 4.5V,

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Vishay Siliconix

SIE830DF-T1-GE3

Sehemu ya hisa.: 1084

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 50A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 16A, 10V,

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Vishay Siliconix

SIJ484DP-T1-GE3

Sehemu ya hisa.: 1125

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 35A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 10A, 10V,

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Vishay Siliconix

SI4102DY-T1-E3

Sehemu ya hisa.: 1011

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.8A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 158 mOhm @ 2.7A, 10V,

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Vishay Siliconix

SI7409ADN-T1-GE3

Sehemu ya hisa.: 1068

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 7A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 2.5V, 4.5V, Rds On (Max) @ Id, Vgs: 19 mOhm @ 11A, 4.5V,

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Vishay Siliconix

SIR838DP-T1-GE3

Sehemu ya hisa.: 979

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 150V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 35A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 33 mOhm @ 8.3A, 10V,

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Vishay Siliconix

SI4880DY-T1-E3

Sehemu ya hisa.: 1021

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 13A, 10V,

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Vishay Siliconix

SI4354DY-T1-GE3

Sehemu ya hisa.: 1006

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 9.5A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 9.5A, 10V,

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