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Transistors - FETs, MOSFETs - Moja

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  • Transistors - FETs, MOSFETs - Moja
SI8417DB-T2-E1
Vishay Siliconix

SI8417DB-T2-E1

Sehemu ya hisa.: 1090

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 12V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 14.5A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 21 mOhm @ 1A, 4.5V,

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SI1413DH-T1-E3
Vishay Siliconix

SI1413DH-T1-E3

Sehemu ya hisa.: 1003

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.3A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 115 mOhm @ 2.9A, 4.5V,

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SI4354DY-T1-E3
Vishay Siliconix

SI4354DY-T1-E3

Sehemu ya hisa.: 1080

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 9.5A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 9.5A, 10V,

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SI7404DN-T1-E3
Vishay Siliconix

SI7404DN-T1-E3

Sehemu ya hisa.: 1084

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 8.5A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 2.5V, 10V, Rds On (Max) @ Id, Vgs: 13 mOhm @ 13.3A, 10V,

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SI7445DP-T1-E3
Vishay Siliconix

SI7445DP-T1-E3

Sehemu ya hisa.: 1090

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 12A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 19A, 4.5V,

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SUP60N06-12P-E3
Vishay Siliconix

SUP60N06-12P-E3

Sehemu ya hisa.: 6184

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 60A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 12 mOhm @ 30A, 10V,

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SI1426DH-T1-GE3
Vishay Siliconix

SI1426DH-T1-GE3

Sehemu ya hisa.: 953

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.8A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 75 mOhm @ 3.6A, 10V,

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SI4684DY-T1-GE3
Vishay Siliconix

SI4684DY-T1-GE3

Sehemu ya hisa.: 1050

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 16A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 16A, 10V,

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SI7356ADP-T1-E3
Vishay Siliconix

SI7356ADP-T1-E3

Sehemu ya hisa.: 1121

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 40A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 3 mOhm @ 20A, 10V,

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SI2331DS-T1-GE3
Vishay Siliconix

SI2331DS-T1-GE3

Sehemu ya hisa.: 6108

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 12V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.2A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 48 mOhm @ 3.6A, 4.5V,

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SI5461EDC-T1-E3
Vishay Siliconix

SI5461EDC-T1-E3

Sehemu ya hisa.: 1084

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4.5A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 45 mOhm @ 5A, 4.5V,

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SI3447CDV-T1-GE3
Vishay Siliconix

SI3447CDV-T1-GE3

Sehemu ya hisa.: 191534

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 12V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 7.8A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 36 mOhm @ 6.3A, 4.5V,

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SI3475DV-T1-GE3
Vishay Siliconix

SI3475DV-T1-GE3

Sehemu ya hisa.: 6157

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 950mA (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 1.61 Ohm @ 900mA, 10V,

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SI7384DP-T1-GE3
Vishay Siliconix

SI7384DP-T1-GE3

Sehemu ya hisa.: 77071

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 11A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 18A, 10V,

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SI7447ADP-T1-E3
Vishay Siliconix

SI7447ADP-T1-E3

Sehemu ya hisa.: 1097

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 35A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 24A, 10V,

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SIE878DF-T1-GE3
Vishay Siliconix

SIE878DF-T1-GE3

Sehemu ya hisa.: 95820

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 25V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 45A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V,

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SI5475BDC-T1-GE3
Vishay Siliconix

SI5475BDC-T1-GE3

Sehemu ya hisa.: 1058

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 12V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 28 mOhm @ 5.6A, 4.5V,

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SI3867DV-T1-GE3
Vishay Siliconix

SI3867DV-T1-GE3

Sehemu ya hisa.: 6158

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.9A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 2.5V, 4.5V, Rds On (Max) @ Id, Vgs: 51 mOhm @ 5.1A, 4.5V,

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SUD40N02-3M3P-E3
Vishay Siliconix

SUD40N02-3M3P-E3

Sehemu ya hisa.: 1108

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 24.4A (Ta), 40A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 20A, 10V,

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SI5857DU-T1-GE3
Vishay Siliconix

SI5857DU-T1-GE3

Sehemu ya hisa.: 1081

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 2.5V, 4.5V, Rds On (Max) @ Id, Vgs: 58 mOhm @ 3.6A, 4.5V,

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SUP85N10-10P-GE3
Vishay Siliconix

SUP85N10-10P-GE3

Sehemu ya hisa.: 1092

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 85A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 10 mOhm @ 20A, 10V,

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SI7457DP-T1-GE3
Vishay Siliconix

SI7457DP-T1-GE3

Sehemu ya hisa.: 1130

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 28A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 42 mOhm @ 7.9A, 10V,

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SI2335DS-T1-GE3
Vishay Siliconix

SI2335DS-T1-GE3

Sehemu ya hisa.: 1016

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 12V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.2A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 51 mOhm @ 4A, 4.5V,

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SI8473EDB-T1-E1
Vishay Siliconix

SI8473EDB-T1-E1

Sehemu ya hisa.: 130855

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Voltage ya Kuendesha (Max Rds On, Min Rds On): 2.5V, 4.5V, Rds On (Max) @ Id, Vgs: 41 mOhm @ 1A, 4.5V,

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SI5475DC-T1-E3
Vishay Siliconix

SI5475DC-T1-E3

Sehemu ya hisa.: 1108

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 12V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5.5A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 31 mOhm @ 5.5A, 4.5V,

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SI4320DY-T1-GE3
Vishay Siliconix

SI4320DY-T1-GE3

Sehemu ya hisa.: 1025

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 17A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 3 mOhm @ 25A, 10V,

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SIR874DP-T1-GE3
Vishay Siliconix

SIR874DP-T1-GE3

Sehemu ya hisa.: 1065

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 25V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 20A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 10A, 10V,

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SI7882DP-T1-E3
Vishay Siliconix

SI7882DP-T1-E3

Sehemu ya hisa.: 1122

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 12V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 13A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 2.5V, 4.5V, Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 17A, 4.5V,

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SI4483EDY-T1-GE3
Vishay Siliconix

SI4483EDY-T1-GE3

Sehemu ya hisa.: 1090

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 10A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 14A, 10V,

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SI5411EDU-T1-GE3
Vishay Siliconix

SI5411EDU-T1-GE3

Sehemu ya hisa.: 108425

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 12V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 25A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 6A, 4.5V,

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SUD50P04-23-GE3
Vishay Siliconix

SUD50P04-23-GE3

Sehemu ya hisa.: 1074

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 8.2A (Ta), 20A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 23 mOhm @ 15A, 10V,

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SI1073X-T1-E3
Vishay Siliconix

SI1073X-T1-E3

Sehemu ya hisa.: 1053

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 173 mOhm @ 980mA, 10V,

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SI3879DV-T1-GE3
Vishay Siliconix

SI3879DV-T1-GE3

Sehemu ya hisa.: 1016

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 2.5V, 4.5V, Rds On (Max) @ Id, Vgs: 70 mOhm @ 3.5A, 4.5V,

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SI7402DN-T1-GE3
Vishay Siliconix

SI7402DN-T1-GE3

Sehemu ya hisa.: 1092

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 12V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 13A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 20A, 4.5V,

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SI5853DDC-T1-E3
Vishay Siliconix

SI5853DDC-T1-E3

Sehemu ya hisa.: 197780

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 105 mOhm @ 2.9A, 4.5V,

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SI5482DU-T1-GE3
Vishay Siliconix

SI5482DU-T1-GE3

Sehemu ya hisa.: 1111

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 12A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 15 mOhm @ 7.4A, 10V,

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