Transistors - FETs, MOSFETs - Moja

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Transistors - FETs, MOSFETs - Moja

SUP60N10-18P-E3

Vishay Siliconix

SUP60N10-18P-E3

Sehemu ya hisa.: 1092

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 60A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 8V, 10V, Rds On (Max) @ Id, Vgs: 18.3 mOhm @ 15A, 10V,

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SI7358ADP-T1-E3

Vishay Siliconix

SI7358ADP-T1-E3

Sehemu ya hisa.: 1097

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 14A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 23A, 10V,

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SI3495DV-T1-GE3

Vishay Siliconix

SI3495DV-T1-GE3

Sehemu ya hisa.: 1052

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5.3A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.5V, 4.5V, Rds On (Max) @ Id, Vgs: 24 mOhm @ 7A, 4.5V,

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SUD50N02-04P-E3

Vishay Siliconix

SUD50N02-04P-E3

Sehemu ya hisa.: 6135

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 50A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 20A, 10V,

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Vishay Siliconix

SIE816DF-T1-E3

Sehemu ya hisa.: 1048

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 60A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 7.4 mOhm @ 19.8A, 10V,

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SI1403CDL-T1-GE3

Vishay Siliconix

SI1403CDL-T1-GE3

Sehemu ya hisa.: 173021

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.1A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 2.5V, 4.5V, Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.6A, 4.5V,

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SI7403BDN-T1-GE3

Vishay Siliconix

SI7403BDN-T1-GE3

Sehemu ya hisa.: 946

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 8A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 2.5V, 4.5V, Rds On (Max) @ Id, Vgs: 74 mOhm @ 5.1A, 4.5V,

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Vishay Siliconix

SI4104DY-T1-E3

Sehemu ya hisa.: 1005

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4.6A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 105 mOhm @ 5A, 10V,

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SIR432DP-T1-GE3

Vishay Siliconix

SIR432DP-T1-GE3

Sehemu ya hisa.: 1118

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 28.4A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 7.5V, 10V, Rds On (Max) @ Id, Vgs: 30.6 mOhm @ 8.6A, 10V,

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SUP90N08-6M8P-E3

Vishay Siliconix

SUP90N08-6M8P-E3

Sehemu ya hisa.: 1082

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 75V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 90A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 20A, 10V,

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SI3441BDV-T1-GE3

Vishay Siliconix

SI3441BDV-T1-GE3

Sehemu ya hisa.: 6113

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.45A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 2.5V, 4.5V, Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.3A, 4.5V,

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Vishay Siliconix

SIE860DF-T1-E3

Sehemu ya hisa.: 1142

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 60A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 21.7A, 10V,

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Vishay Siliconix

IRFZ14PBF

Sehemu ya hisa.: 72560

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 10A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 200 mOhm @ 6A, 10V,

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SI7392DP-T1-GE3

Vishay Siliconix

SI7392DP-T1-GE3

Sehemu ya hisa.: 1120

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 9A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 9.75 mOhm @ 15A, 10V,

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Vishay Siliconix

SI7664DP-T1-E3

Sehemu ya hisa.: 1103

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 40A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 20A, 10V,

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SI4466DY-T1-GE3

Vishay Siliconix

SI4466DY-T1-GE3

Sehemu ya hisa.: 1009

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 9.5A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 2.5V, 4.5V, Rds On (Max) @ Id, Vgs: 9 mOhm @ 13.5A, 4.5V,

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SI4102DY-T1-GE3

Vishay Siliconix

SI4102DY-T1-GE3

Sehemu ya hisa.: 163987

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.8A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 158 mOhm @ 2.7A, 10V,

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Vishay Siliconix

SI5402DC-T1-E3

Sehemu ya hisa.: 1049

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4.9A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.9A, 10V,

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Vishay Siliconix

SIE726DF-T1-E3

Sehemu ya hisa.: 6114

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 60A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 25A, 10V,

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SI7888DP-T1-GE3

Vishay Siliconix

SI7888DP-T1-GE3

Sehemu ya hisa.: 6180

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 9.4A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 12 mOhm @ 12.4A, 10V,

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SI4411DY-T1-GE3

Vishay Siliconix

SI4411DY-T1-GE3

Sehemu ya hisa.: 1040

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 9A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 10 mOhm @ 13A, 10V,

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SI7495DP-T1-GE3

Vishay Siliconix

SI7495DP-T1-GE3

Sehemu ya hisa.: 1105

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 12V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 13A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 21A, 4.5V,

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SIE848DF-T1-GE3

Vishay Siliconix

SIE848DF-T1-GE3

Sehemu ya hisa.: 6173

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 60A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 25A, 10V,

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IRFBC30ASTRRPBF

Vishay Siliconix

IRFBC30ASTRRPBF

Sehemu ya hisa.: 1029

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.6A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 2.2A, 10V,

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SI7425DN-T1-GE3

Vishay Siliconix

SI7425DN-T1-GE3

Sehemu ya hisa.: 1106

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 12V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 8.3A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 16 mOhm @ 12.6A, 4.5V,

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Vishay Siliconix

SI4390DY-T1-E3

Sehemu ya hisa.: 53080

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 8.5A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 12.5A, 10V,

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SI4048DY-T1-GE3

Vishay Siliconix

SI4048DY-T1-GE3

Sehemu ya hisa.: 127610

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 19.3A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 85 mOhm @ 15A, 10V,

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SI2327DS-T1-GE3

Vishay Siliconix

SI2327DS-T1-GE3

Sehemu ya hisa.: 986

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 380mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 2.35 Ohm @ 500mA, 10V,

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SI2303BDS-T1-GE3

Vishay Siliconix

SI2303BDS-T1-GE3

Sehemu ya hisa.: 1030

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.49A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.7A, 10V,

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Vishay Siliconix

SI6404DQ-T1-E3

Sehemu ya hisa.: 1110

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 8.6A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 2.5V, 10V, Rds On (Max) @ Id, Vgs: 9 mOhm @ 11A, 10V,

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Vishay Siliconix

SUP28N15-52-E3

Sehemu ya hisa.: 6205

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 150V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 28A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 52 mOhm @ 5A, 10V,

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SUP85N03-04P-E3

Vishay Siliconix

SUP85N03-04P-E3

Sehemu ya hisa.: 1077

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 85A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 30A, 10V,

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SUM70N03-09CP-E3

Vishay Siliconix

SUM70N03-09CP-E3

Sehemu ya hisa.: 1060

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 70A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 20A, 10V,

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SI7674DP-T1-GE3

Vishay Siliconix

SI7674DP-T1-GE3

Sehemu ya hisa.: 1123

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 40A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 20A, 10V,

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Vishay Siliconix

SI7368DP-T1-E3

Sehemu ya hisa.: 1095

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 13A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 20A, 10V,

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SI7447ADP-T1-GE3

Vishay Siliconix

SI7447ADP-T1-GE3

Sehemu ya hisa.: 1094

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 35A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 24A, 10V,

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3600

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