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Transistors - FETs, MOSFETs - safu

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  • Transistors - FETs, MOSFETs - safu
SI4567DY-T1-E3
Vishay Siliconix

SI4567DY-T1-E3

Sehemu ya hisa.: 2783

Aina ya FET: N and P-Channel, Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5A, 4.4A, Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.1A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

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SI5906DU-T1-GE3
Vishay Siliconix

SI5906DU-T1-GE3

Sehemu ya hisa.: 2915

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6A, Rds On (Max) @ Id, Vgs: 31 mOhm @ 4.8A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

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SI4500BDY-T1-E3
Vishay Siliconix

SI4500BDY-T1-E3

Sehemu ya hisa.: 2701

Aina ya FET: N and P-Channel, Common Drain, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6.6A, 3.8A, Rds On (Max) @ Id, Vgs: 20 mOhm @ 9.1A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

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SI3909DV-T1-E3
Vishay Siliconix

SI3909DV-T1-E3

Sehemu ya hisa.: 2856

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.8A, 4.5V, Vgs (th) (Max) @ Id: 500mV @ 250µA (Min),

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SI4830CDY-T1-GE3
Vishay Siliconix

SI4830CDY-T1-GE3

Sehemu ya hisa.: 135529

Aina ya FET: 2 N-Channel (Half Bridge), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 8A, Rds On (Max) @ Id, Vgs: 20 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 3V @ 1mA,

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SI9933BDY-T1-E3
Vishay Siliconix

SI9933BDY-T1-E3

Sehemu ya hisa.: 2801

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.6A, Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.7A, 4.5V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

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SI1553DL-T1-E3
Vishay Siliconix

SI1553DL-T1-E3

Sehemu ya hisa.: 2696

Aina ya FET: N and P-Channel, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 660mA, 410mA, Rds On (Max) @ Id, Vgs: 385 mOhm @ 660mA, 4.5V, Vgs (th) (Max) @ Id: 600mV @ 250µA (Min),

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SI9945AEY-T1
Vishay Siliconix

SI9945AEY-T1

Sehemu ya hisa.: 2814

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.7A, Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.7A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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SI1539DL-T1-GE3
Vishay Siliconix

SI1539DL-T1-GE3

Sehemu ya hisa.: 2837

Aina ya FET: N and P-Channel, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 540mA, 420mA, Rds On (Max) @ Id, Vgs: 480 mOhm @ 590mA, 10V, Vgs (th) (Max) @ Id: 2.6V @ 250µA,

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SI4330DY-T1-GE3
Vishay Siliconix

SI4330DY-T1-GE3

Sehemu ya hisa.: 2810

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6.6A, Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 8.7A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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SI3905DV-T1-E3
Vishay Siliconix

SI3905DV-T1-E3

Sehemu ya hisa.: 2795

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 8V, Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 250µA (Min),

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SI7501DN-T1-GE3
Vishay Siliconix

SI7501DN-T1-GE3

Sehemu ya hisa.: 57296

Aina ya FET: N and P-Channel, Common Drain, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5.4A, 4.5A, Rds On (Max) @ Id, Vgs: 35 mOhm @ 7.7A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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SI5975DC-T1-GE3
Vishay Siliconix

SI5975DC-T1-GE3

Sehemu ya hisa.: 2853

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 12V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.1A, Rds On (Max) @ Id, Vgs: 86 mOhm @ 3.1A, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 1mA (Min),

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SI6943BDQ-T1-GE3
Vishay Siliconix

SI6943BDQ-T1-GE3

Sehemu ya hisa.: 2834

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 12V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.3A, Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 800mV @ 250µA,

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SI6963BDQ-T1-GE3
Vishay Siliconix

SI6963BDQ-T1-GE3

Sehemu ya hisa.: 2791

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.4A, Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.9A, 4.5V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

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SI5975DC-T1-E3
Vishay Siliconix

SI5975DC-T1-E3

Sehemu ya hisa.: 2864

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 12V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.1A, Rds On (Max) @ Id, Vgs: 86 mOhm @ 3.1A, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 1mA (Min),

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SI6973DQ-T1-E3
Vishay Siliconix

SI6973DQ-T1-E3

Sehemu ya hisa.: 2882

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4.1A, Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.8A, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 250µA (Min),

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SI1988DH-T1-GE3
Vishay Siliconix

SI1988DH-T1-GE3

Sehemu ya hisa.: 2796

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.3A, Rds On (Max) @ Id, Vgs: 168 mOhm @ 1.4A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

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SIZ900DT-T1-GE3
Vishay Siliconix

SIZ900DT-T1-GE3

Sehemu ya hisa.: 87000

Aina ya FET: 2 N-Channel (Half Bridge), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 24A, 28A, Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 19.4A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

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SI7958DP-T1-E3
Vishay Siliconix

SI7958DP-T1-E3

Sehemu ya hisa.: 3297

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 7.2A, Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 11.3A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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SI4816DY-T1-GE3
Vishay Siliconix

SI4816DY-T1-GE3

Sehemu ya hisa.: 2804

Aina ya FET: 2 N-Channel (Half Bridge), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5.3A, 7.7A, Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.3A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

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SI1912EDH-T1-E3
Vishay Siliconix

SI1912EDH-T1-E3

Sehemu ya hisa.: 2739

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.13A, Rds On (Max) @ Id, Vgs: 280 mOhm @ 1.13A, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 100µA (Min),

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SI1563DH-T1-E3
Vishay Siliconix

SI1563DH-T1-E3

Sehemu ya hisa.: 3284

Aina ya FET: N and P-Channel, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.13A, 880mA, Rds On (Max) @ Id, Vgs: 280 mOhm @ 1.13A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 100µA,

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SI4834CDY-T1-GE3
Vishay Siliconix

SI4834CDY-T1-GE3

Sehemu ya hisa.: 135475

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 8A, Rds On (Max) @ Id, Vgs: 20 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 3V @ 1mA,

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SI6943BDQ-T1-E3
Vishay Siliconix

SI6943BDQ-T1-E3

Sehemu ya hisa.: 2779

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 12V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.3A, Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 800mV @ 250µA,

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SI7960DP-T1-GE3
Vishay Siliconix

SI7960DP-T1-GE3

Sehemu ya hisa.: 2812

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6.2A, Rds On (Max) @ Id, Vgs: 21 mOhm @ 9.7A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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SI7222DN-T1-E3
Vishay Siliconix

SI7222DN-T1-E3

Sehemu ya hisa.: 2764

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6A, Rds On (Max) @ Id, Vgs: 42 mOhm @ 5.7A, 10V, Vgs (th) (Max) @ Id: 1.6V @ 250µA,

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SI1553DL-T1
Vishay Siliconix

SI1553DL-T1

Sehemu ya hisa.: 2791

Aina ya FET: N and P-Channel, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 660mA, 410mA, Rds On (Max) @ Id, Vgs: 385 mOhm @ 660mA, 4.5V, Vgs (th) (Max) @ Id: 600mV @ 250µA (Min),

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SI6955ADQ-T1-E3
Vishay Siliconix

SI6955ADQ-T1-E3

Sehemu ya hisa.: 2891

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.5A, Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.9A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

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SI4834CDY-T1-E3
Vishay Siliconix

SI4834CDY-T1-E3

Sehemu ya hisa.: 135916

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 8A, Rds On (Max) @ Id, Vgs: 20 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 3V @ 1mA,

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SI4230DY-T1-GE3
Vishay Siliconix

SI4230DY-T1-GE3

Sehemu ya hisa.: 2831

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 8A, Rds On (Max) @ Id, Vgs: 20.5 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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SI7216DN-T1-E3
Vishay Siliconix

SI7216DN-T1-E3

Sehemu ya hisa.: 113570

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6A, Rds On (Max) @ Id, Vgs: 32 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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SI1034X-T1-E3
Vishay Siliconix

SI1034X-T1-E3

Sehemu ya hisa.: 2786

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 180mA, Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

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SI3850ADV-T1-E3
Vishay Siliconix

SI3850ADV-T1-E3

Sehemu ya hisa.: 2773

Aina ya FET: N and P-Channel, Common Drain, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.4A, 960mA, Rds On (Max) @ Id, Vgs: 300 mOhm @ 500mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

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SI7222DN-T1-GE3
Vishay Siliconix

SI7222DN-T1-GE3

Sehemu ya hisa.: 2787

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6A, Rds On (Max) @ Id, Vgs: 42 mOhm @ 5.7A, 10V, Vgs (th) (Max) @ Id: 1.6V @ 250µA,

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SI6966EDQ-T1-E3
Vishay Siliconix

SI6966EDQ-T1-E3

Sehemu ya hisa.: 2830

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.2A, 4.5V, Vgs (th) (Max) @ Id: 600mV @ 250µA (Min),

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