Transistors - FETs, MOSFETs - safu

Nyumbani
Transistors - FETs, MOSFETs - safu

SI4936ADY-T1-GE3

Vishay Siliconix

SI4936ADY-T1-GE3

Sehemu ya hisa.: 77137

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4.4A, Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.9A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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Vishay Siliconix

SI4920DY-T1-E3

Sehemu ya hisa.: 2966

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Rds On (Max) @ Id, Vgs: 25 mOhm @ 6.9A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

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SI1905BDH-T1-E3

Vishay Siliconix

SI1905BDH-T1-E3

Sehemu ya hisa.: 3022

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 8V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 630mA, Rds On (Max) @ Id, Vgs: 542 mOhm @ 580mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

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SI4904DY-T1-GE3

Vishay Siliconix

SI4904DY-T1-GE3

Sehemu ya hisa.: 68499

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 8A, Rds On (Max) @ Id, Vgs: 16 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

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SI4900DY-T1-GE3

Vishay Siliconix

SI4900DY-T1-GE3

Sehemu ya hisa.: 132105

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5.3A, Rds On (Max) @ Id, Vgs: 58 mOhm @ 4.3A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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SIA907EDJT-T1-GE3

Vishay Siliconix

SIA907EDJT-T1-GE3

Sehemu ya hisa.: 150001

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4.5A (Tc), Rds On (Max) @ Id, Vgs: 57 mOhm @ 3.6A, 4.5V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

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SI4804CDY-T1-E3

Vishay Siliconix

SI4804CDY-T1-E3

Sehemu ya hisa.: 129067

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 8A, Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

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SI4922BDY-T1-GE3

Vishay Siliconix

SI4922BDY-T1-GE3

Sehemu ya hisa.: 93125

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 8A, Rds On (Max) @ Id, Vgs: 16 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 1.8V @ 250µA,

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SQJQ900E-T1_GE3

Vishay Siliconix

SQJQ900E-T1_GE3

Sehemu ya hisa.: 69083

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 100A (Tc), Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

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SI6963BDQ-T1-E3

Vishay Siliconix

SI6963BDQ-T1-E3

Sehemu ya hisa.: 3001

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.4A, Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.9A, 4.5V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

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SI4539ADY-T1-GE3

Vishay Siliconix

SI4539ADY-T1-GE3

Sehemu ya hisa.: 3314

Aina ya FET: N and P-Channel, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4.4A, 3.7A, Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.9A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

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SI4816BDY-T1-E3

Vishay Siliconix

SI4816BDY-T1-E3

Sehemu ya hisa.: 93648

Aina ya FET: 2 N-Channel (Half Bridge), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5.8A, 8.2A, Rds On (Max) @ Id, Vgs: 18.5 mOhm @ 6.8A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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Vishay Siliconix

SI1023X-T1-E3

Sehemu ya hisa.: 2929

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 370mA, Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 350mA, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 250µA (Min),

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SQ3987EV-T1_GE3

Vishay Siliconix

SQ3987EV-T1_GE3

Sehemu ya hisa.: 16233

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3A (Tc), Rds On (Max) @ Id, Vgs: 133 mOhm @ 1.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

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Vishay Siliconix

SI5915DC-T1-E3

Sehemu ya hisa.: 2988

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 8V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.4A, Rds On (Max) @ Id, Vgs: 70 mOhm @ 3.4A, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 250µA (Min),

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SI3585DV-T1-GE3

Vishay Siliconix

SI3585DV-T1-GE3

Sehemu ya hisa.: 3014

Aina ya FET: N and P-Channel, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2A, 1.5A, Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.4A, 4.5V, Vgs (th) (Max) @ Id: 600mV @ 250µA (Min),

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Vishay Siliconix

SI7956DP-T1-E3

Sehemu ya hisa.: 43929

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 150V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.6A, Rds On (Max) @ Id, Vgs: 105 mOhm @ 4.1A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

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SI3552DV-T1-GE3

Vishay Siliconix

SI3552DV-T1-GE3

Sehemu ya hisa.: 189573

Aina ya FET: N and P-Channel, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Rds On (Max) @ Id, Vgs: 105 mOhm @ 2.5A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

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SQJ956EP-T1_GE3

Vishay Siliconix

SQJ956EP-T1_GE3

Sehemu ya hisa.: 9990

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 23A (Tc), Rds On (Max) @ Id, Vgs: 26.7 mOhm @ 5.2A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

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SI7940DP-T1-GE3

Vishay Siliconix

SI7940DP-T1-GE3

Sehemu ya hisa.: 2920

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 12V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 7.6A, Rds On (Max) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

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SI4936ADY-T1-E3

Vishay Siliconix

SI4936ADY-T1-E3

Sehemu ya hisa.: 77138

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4.4A, Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.9A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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SI5933CDC-T1-GE3

Vishay Siliconix

SI5933CDC-T1-GE3

Sehemu ya hisa.: 181122

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.7A, Rds On (Max) @ Id, Vgs: 144 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

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SI7223DN-T1-GE3

Vishay Siliconix

SI7223DN-T1-GE3

Sehemu ya hisa.: 9952

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6A (Tc), Rds On (Max) @ Id, Vgs: 26.4 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

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SI9933CDY-T1-E3

Vishay Siliconix

SI9933CDY-T1-E3

Sehemu ya hisa.: 154905

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4A, Rds On (Max) @ Id, Vgs: 58 mOhm @ 4.8A, 4.5V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

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SIZ346DT-T1-GE3

Vishay Siliconix

SIZ346DT-T1-GE3

Sehemu ya hisa.: 9988

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 17A (Tc), 30A (Tc), Rds On (Max) @ Id, Vgs: 28.5 mOhm @ 10A, 10V, 11.5 mOhm @ 14.4A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA, 2.4V @ 250µA,

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SIZ728DT-T1-GE3

Vishay Siliconix

SIZ728DT-T1-GE3

Sehemu ya hisa.: 110130

Aina ya FET: 2 N-Channel (Half Bridge), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 25V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 16A, 35A, Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 18A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

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SI4288DY-T1-GE3

Vishay Siliconix

SI4288DY-T1-GE3

Sehemu ya hisa.: 118896

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 9.2A, Rds On (Max) @ Id, Vgs: 20 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

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Vishay Siliconix

SI5938DU-T1-E3

Sehemu ya hisa.: 2940

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6A, Rds On (Max) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

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Vishay Siliconix

SI4650DY-T1-E3

Sehemu ya hisa.: 2953

Aina ya FET: 2 N-Channel (Half Bridge), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 8A, Rds On (Max) @ Id, Vgs: 18 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 3V @ 1mA,

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SI5997DU-T1-GE3

Vishay Siliconix

SI5997DU-T1-GE3

Sehemu ya hisa.: 168303

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6A, Rds On (Max) @ Id, Vgs: 54 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

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SIZ350DT-T1-GE3

Vishay Siliconix

SIZ350DT-T1-GE3

Sehemu ya hisa.: 220

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 18.5A (Ta), 30A (Tc), Rds On (Max) @ Id, Vgs: 6.75 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

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SI4590DY-T1-GE3

Vishay Siliconix

SI4590DY-T1-GE3

Sehemu ya hisa.: 189788

Aina ya FET: N and P-Channel, Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.4A, 2.8A, Rds On (Max) @ Id, Vgs: 57 mOhm @ 2A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

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SI3900DV-T1-GE3

Vishay Siliconix

SI3900DV-T1-GE3

Sehemu ya hisa.: 169893

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2A, Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.4A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

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Vishay Siliconix

SI1023X-T1-GE3

Sehemu ya hisa.: 119178

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 370mA, Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 350mA, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 250µA (Min),

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SI1902DL-T1-GE3

Vishay Siliconix

SI1902DL-T1-GE3

Sehemu ya hisa.: 162518

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 660mA, Rds On (Max) @ Id, Vgs: 385 mOhm @ 660mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

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SI4532CDY-T1-GE3

Vishay Siliconix

SI4532CDY-T1-GE3

Sehemu ya hisa.: 107643

Aina ya FET: N and P-Channel, Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6A, 4.3A, Rds On (Max) @ Id, Vgs: 47 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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