Transistors - FETs, MOSFETs - safu | Bidhaa tofauti za semiconductor | 18

SI4804CDY-T1-GE3

Sehemu ya hisa.: 85201

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 8A, Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

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SI5515DC-T1-GE3

Sehemu ya hisa.: 153475

Aina ya FET: N and P-Channel, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4.4A, 3A, Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.4A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

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SQ1902AEL-T1_GE3

Sehemu ya hisa.: 9906

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 780mA (Tc), Rds On (Max) @ Id, Vgs: 415 mOhm @ 660mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

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SI4204DY-T1-GE3

Sehemu ya hisa.: 80891

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 19.8A, Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

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SI1034X-T1-GE3

Sehemu ya hisa.: 127515

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 180mA, Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

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SI3981DV-T1-E3

Sehemu ya hisa.: 3003

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.6A, Rds On (Max) @ Id, Vgs: 185 mOhm @ 1.9A, 4.5V, Vgs (th) (Max) @ Id: 1.1V @ 250µA,

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SQJ910AEP-T1_GE3

Sehemu ya hisa.: 9943

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 30A (Tc), Rds On (Max) @ Id, Vgs: 7 mOhm @ 12A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

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SI7501DN-T1-E3

Sehemu ya hisa.: 3365

Aina ya FET: N and P-Channel, Common Drain, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5.4A, 4.5A, Rds On (Max) @ Id, Vgs: 35 mOhm @ 7.7A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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SIZ980DT-T1-GE3

Sehemu ya hisa.: 16202

Aina ya FET: 2 N-Channel (Dual), Schottky, Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 20A (Tc), 60A (Tc), Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 15A, 10V, 1.6 mOhm @ 19A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

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SI4909DY-T1-GE3

Sehemu ya hisa.: 158525

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 8A, Rds On (Max) @ Id, Vgs: 27 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

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SI4925BDY-T1-GE3

Sehemu ya hisa.: 89747

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5.3A, Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.1A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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SI8902EDB-T2-E1

Sehemu ya hisa.: 86559

Aina ya FET: 2 N-Channel (Dual) Common Drain, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.9A, Vgs (th) (Max) @ Id: 1V @ 980µA,

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SI3590DV-T1-GE3

Sehemu ya hisa.: 199636

Aina ya FET: N and P-Channel, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.5A, 1.7A, Rds On (Max) @ Id, Vgs: 77 mOhm @ 3A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

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SI7998DP-T1-GE3

Sehemu ya hisa.: 103462

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 25A, 30A, Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

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SIA915DJ-T4-GE3

Sehemu ya hisa.: 2966

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.7A (Ta), 4.5A (Tc), Rds On (Max) @ Id, Vgs: 87 mOhm @ 2.9A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

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SIZ322DT-T1-GE3

Sehemu ya hisa.: 266

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 25V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 30A (Tc), Rds On (Max) @ Id, Vgs: 6.35 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

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SI5944DU-T1-GE3

Sehemu ya hisa.: 2992

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6A, Rds On (Max) @ Id, Vgs: 112 mOhm @ 3.3A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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SI7997DP-T1-GE3

Sehemu ya hisa.: 69522

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 60A, Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

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SI4818DY-T1-E3

Sehemu ya hisa.: 2959

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5.3A, 7A, Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.3A, 10V, Vgs (th) (Max) @ Id: 800mV @ 250µA (Min),

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SQ4937EY-T1_GE3

Sehemu ya hisa.: 10827

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5A (Tc), Rds On (Max) @ Id, Vgs: 75 mOhm @ 3.9A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

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SI4931DY-T1-E3

Sehemu ya hisa.: 180805

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 12V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6.7A, Rds On (Max) @ Id, Vgs: 18 mOhm @ 8.9A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 350µA,

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SI7964DP-T1-E3

Sehemu ya hisa.: 3339

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6.1A, Rds On (Max) @ Id, Vgs: 23 mOhm @ 9.6A, 10V, Vgs (th) (Max) @ Id: 4.5V @ 250µA,

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SI7220DN-T1-GE3

Sehemu ya hisa.: 86597

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.4A, Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.8A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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SI7905DN-T1-GE3

Sehemu ya hisa.: 73616

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6A, Rds On (Max) @ Id, Vgs: 60 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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SQJ912AEP-T1_GE3

Sehemu ya hisa.: 141553

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 30A, Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 9.7A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

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SI3585CDV-T1-GE3

Sehemu ya hisa.: 112724

Aina ya FET: N and P-Channel, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.9A, 2.1A, Rds On (Max) @ Id, Vgs: 58 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

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SI4830CDY-T1-E3

Sehemu ya hisa.: 135865

Aina ya FET: 2 N-Channel (Half Bridge), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 8A, Rds On (Max) @ Id, Vgs: 20 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 3V @ 1mA,

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SI5935DC-T1-E3

Sehemu ya hisa.: 3338

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3A, Rds On (Max) @ Id, Vgs: 86 mOhm @ 3A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

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SI6969BDQ-T1-GE3

Sehemu ya hisa.: 2845

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 12V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4A, Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.6A, 4.5V, Vgs (th) (Max) @ Id: 800mV @ 250µA,

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SI3585DV-T1-E3

Sehemu ya hisa.: 2733

Aina ya FET: N and P-Channel, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2A, 1.5A, Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.4A, 4.5V, Vgs (th) (Max) @ Id: 600mV @ 250µA (Min),

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SI4916DY-T1-E3

Sehemu ya hisa.: 159074

Aina ya FET: 2 N-Channel (Half Bridge), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 10A, 10.5A, Rds On (Max) @ Id, Vgs: 18 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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SI7872DP-T1-E3

Sehemu ya hisa.: 71511

Aina ya FET: 2 N-Channel (Half Bridge), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6.4A, Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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SI6966DQ-T1-E3

Sehemu ya hisa.: 2873

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4A, Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.5A, 4.5V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

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SI4992EY-T1-E3

Sehemu ya hisa.: 2722

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 75V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.6A, Rds On (Max) @ Id, Vgs: 48 mOhm @ 4.8A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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SI4967DY-T1-GE3

Sehemu ya hisa.: 3379

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 12V, Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.5A, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 250µA (Min),

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SI1972DH-T1-E3

Sehemu ya hisa.: 2739

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.3A, Rds On (Max) @ Id, Vgs: 225 mOhm @ 1.3A, 10V, Vgs (th) (Max) @ Id: 2.8V @ 250µA,

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